We demonstrate lateral control of carrier concentration in doped Si for mid-infrared
plasmonic applications. Using commercially available spin-dopants, we show that doped …

The authors demonstrate the ability of high-quality epitaxial InAs films to be used as
wavelength-flexible, low-loss, engineered plasmonic metals across the mid-infrared spectral …

Plasmonic perfect absorbers have found a wide range of applications in imaging, sensing,
and light harvesting and emitting devices. Traditionally, metals are used to implement …

In this work, the authors demonstrate the potential of epitaxially grown highly doped InSb as
an engineered, wavelength-flexible mid-IR plasmonic material. The authors achieve doping …

We demonstrate the potential of highly-doped semiconductor epilayers as building blocks
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …

Optoelectronic devices in the mid-infrared have attracted significant interest due to
numerous potential applications in communications and sensing. Molecular beam epitaxial …

Highly doped semiconductors are an emerging platform for plasmonic devices. Unlike in
noble metals, the carrier concentration of semiconductors can vary by many orders of …

We propose devices based on doped silicon. Doped silicon is designed to act as a
plasmonic medium in the midinfrared (MIR) range. The surface plasmon frequency of the …

Plasmonic gratings and nano-particle arrays in a metal-insulator-metal structures are
fabricated on an erbium doped silicon nitride layer. This material system enables simple …

It is demonstrated experimentally that an aluminum (Al) nanowire grating structure on silicon
substrates can produce low-side-band monochromatic peak when it reflects colored light in …