The resonant Raman scattering by LO and two LO phonons and LO-phonon interference
effects are studied near the E 0+ Δ 0 gap of liquid-phase-epitaxy Al x Ga 1− x As (0≤ x≤ …

The dipole-allowed resonant Raman scattering by LO phonons is studied around the E 0
gap of Al x Ga 1− x As alloys at 100 K. Six high-purity n-type Al x Ga 1− x As samples with …

We have studied by means of Raman scattering the LO phonon-plasmon coupled modes in
n− In 0.53 Ga 0.47 As, for carrier densities between 5× 10 16 and 5× 10 19 cm− 3. In …

A detailed investigation was made using Raman spectroscopy of the longitudinal and
transverse optical phonons in the disordered alloy Al x Ga 1− x As at room temperature …

Detailed Raman measurements were performed on the optical phonons in the disordered
alloy Ga1− xAlxAs at room temperature. The results obtained are compared with earlier …

Abstract The electron–longitudinal-optical-(LO-) phonon interaction in Al x Ga 1− x As has
been studied for the alloy composition ranging from 0.1 to 0.4 by picosecond Raman …

Raman scattering measurements between 20 and 450 K are reported in Ga 1− x Al x As
single crystals for the range 0≤ x≤ 1. Peak-frequency and linewidth variations versus …

We show that the contributions of intrinsic and impurity-induced forbidden LO-phonon
Raman scattering in GaAs can be quantitatively separated by investigating interference …

The one phonon density of states in GaAs is obtained from the measured disorder-activated-
first-order Raman-scattering in Ga 1− x Al x As x alloys. The agreement with several …

We report Raman scattering experiments in mixed crystals Ga 1− x Al x As in the spectral
range 20–400 cm− 1. We performed the measurements for several incident and scattered …