Ka‐band RF MEMS capacitive switch with low loss, high isolation, long‐term reliability and high power handling based on GaAs MMIC technology

C Chu, X Liao, H Yan - IET Microwaves, Antennas & …, 2017 - Wiley Online Library
This study presents a Ka‐band radio frequency (RF) micro electro mechanical systems
(MEMS) capacitive switch with low loss, high isolation, long‐term reliability and high power …

K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability

A Persano, A Tazzoli, P Farinelli, G Meneghesso… - Microelectronics …, 2012 - Elsevier
Shunt capacitive RF MEMS switches were developed on GaAs substrate, using a III–V
technology process that is fully compatible with standard MMIC fabrication. The switches …

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

GS Kondaveeti, K Guha, SR Karumuri… - IET Circuits, Devices …, 2019 - Wiley Online Library
This study reports the design and analysis of novel step structure RF micro‐
electromechanical system (MEMS) switch for low pull‐in voltage, low insertion loss and high …

[HTML][HTML] Novel high isolation and high capacitance ratio RF MEMS switch: design, analysis and performance verification

Z Deng, Y Wang, K Deng, C Lai, J Zhou - Micromachines, 2022 - mdpi.com
In this paper, a novel high isolation and high-capacitance-ratio radio-frequency micro-
electromechanical systems (RF MEMS) switch working at Ka-band is designed, fabricated …

[HTML][HTML] Design and fabrication of a Ka band RF MEMS switch with high capacitance ratio and low actuation voltage

K Deng, F Yang, Y Wang, C Lai, K Han - Micromachines, 2021 - mdpi.com
In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is
designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal …

A novel design of low-voltage low-loss K-band RF-MEMS capacitive switch

LY Ma, N Soin, AN Nordin - 2016 Symposium on Design, Test …, 2016 - ieeexplore.ieee.org
This paper presents a novel design and analysis of capacitive radio frequency (RF) micro-
electromechanical system (MEMS) switch. The RF-MEMS switch is actuated by electrostatic …

Role of dielectric layer and beam membrane in improving the performance of capacitive RF MEMS switches for Ka-band applications

KG Sravani, TL Narayana, K Guha, KS Rao - Microsystem Technologies, 2021 - Springer
In this paper, we have analyzed the role of dielectric layer and different beam membranes
on the performance parameters of shunt capacitive RF MEMS switch. The investigation …

Analysis and design of a novel high capacitance ratio and low actuation voltage RF MEMS switch

K Deng, F Yang, Z Deng, X Wang, K Han - Microsystem Technologies, 2021 - Springer
Abstract Analysis and design of a novel high on/off capacitance ratio and low actuation
voltage radio frequency microelectro-mechanical systems (RF MEMS) switch. Circuit …

Design and performance analysis of low pull-in voltage of dimple type capacitive RF MEMS shunt switch for Ka-band

KG Sravani, D Prathyusha, KS Rao, PA Kumar… - IEEE …, 2019 - ieeexplore.ieee.org
This paper deals with the study of dimple type RF MEMS capacitive shunt switch using
different meandering techniques for high isolation and low actuation voltage. The novelty of …

Design, simulation and analysis of RF MEMS capacitive shunt switches with high isolation and low pull-in-voltage

KG Sravani, D Prathyusha, C Gopichand… - Microsystem …, 2020 - Springer
This paper presents the design a capacitive shunt type RF-MEMS switch with high isolation,
high switching speed and low actuation voltage for Ka-band applications. The proposed RF …