The III-V AlGaInAs quaternary is particularly well suited to conventional molecular beam
epitaxy, and many devices based on this material system have already proved of interest in …

We present a complete investigation of crystalline, optical, and electrical properties of
molecular‐beam‐epitaxial‐grown AlGaInAs lattice matched to InP covering the whole range …

Laser diodes based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide are
developed. It is shown that the use of this waveguide in conjunction with profiled doping …

The authors have studied the molecular-beam epitaxial growth of type-II heterostructures for
mid-wavelength infrared lasers. Based on their photoluminescence spectra and X-ray …

In order to directly realize visible semiconductor lasers, several approaches are under
investigation, including the high bandgap III-V and II-VI compounds. Among these, the …

A mid-IR laser based on a hybrid pseudomorphic AlGaAsSb/InAs/CdMgSe heterostructure
with a III–V/II–VI heterovalent interface at the 0.6-m-InAs active region has been fabricated …

Design, growth, and operation of an unipolar light emitting diode based on the material
system GaAs/AlGaAs is reported. We present mid-infrared transmission, photocurrent, and …

Double heterostructure lasers of Ga x In1− x As1− y P y lattice matched to InP and emitting at
1.55 μm have been grown by chemical beam epitaxy (CBE). Broad‐area lasers fabricated …

We present a novel modified technique of in situ etching with tertiarybutyl chloride (TBCl)
which allows etching of both, GaInAsP/InP and AlGaInAs/InP structures for the fabrication of …

Strain-compensated MQW structures with AlInGaAs barriers and up to 15 AlInGaAs wells
were grown by molecular beam epitaxy (MBE) and characterised by photoluminescence …