GaAs/AlGaAs quantum wells (QWs) were grown on (411) A‐oriented GaAs substrates by
molecular beam epitaxy (MBE). Photoluminescence linewidths at 4.2 K are almost the same …

Abstract GaAs/Al 0.3 Ga 0.7 As quantum wells (QWs) grown on (411) A-oriented GaAs
substrates by molecular beam epitaxy (MBE) showed extremely flat interfaces over a …

Effectively atomically flat interfaces over a macroscopic area (200 μm o/) have been
achieved in GaAs/AlAs quantum wells (QWs) with well widths of 4.8 to 12 nm grown on (411) …

Effectively atomically flat interfaces over a macroscopic area (200 μm diameter) have been
achieved in GaAs/Al0. 7Ga0. 3As quantum wells (QWs) with well widths of 3.6–12 nm grown …

We have grown AlGaAs/GaAs and InGaAs/GaAs single quantum wells (SQWs) on exactly-
oriented and misoriented GaAs (111) A substrates by molecular beam epitaxy (MBE). The …

Normal and inverted interfaces of GaAs/AlGaAs heterostructures are studied by comparing
the luminescence of quantum wells (QWs) grown by molecular‐beam epitaxy with a 10–300 …

We report the growth of high quality molecular beam epitaxy (MBE) AlGaAs,
AlGaAs/GaAs/AlGaAs, and AlAs/GaAs/AlAs multiple quantum wells (MQWs) on (111) A …

GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on GaAs (100)
substrates patterned with ridges and grooves in the [011̄] direction. Low‐temperature …

GaAs films grown on exact (1̄1̄1̄) substrates in the√ 19×√ 19 reconstruction regime
always show facets. The facets are composed of vicinal surfaces which are inclined by small …

Photoluminescence spectra are presented on single quantum well (SQW) structures on thick
(1.0 µm) A1 0.20 Ga 0.80 As buffers grown by molecular beam epitaxy (MBE). Through …