Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates

SW Ryu, PD Dapkus - Electronics Letters, 2000 - search.proquest.com
The low threshold current density GaAsSb/GaAs quantum well lasers were realised by metal
organic chemical vapour deposition. A record low threshold current density of 190A/cm^ sup …
被引用次数：43 相关文章 所有 4 个版本

Low-threshold current GaAsSb= GaAs quantum well lasers grown by solid source molecular beam epitaxy

PW Liu, MH Lee, HH Lin, JR Chen - Electronics Letters, 2002 - search.proquest.com
Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular
beam epitaxy Page 1 Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid …
被引用次数：27 相关文章 所有 5 个版本

Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates

SW Ryu, PD Dapkus - Electronics Letters, 2002 - IET
Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs
substrates Page 1 Room temperature operation of type-II GaAsSb/InGaAs quantum well …
被引用次数：28 相关文章 所有 5 个版本

Low-threshold operation of 1.3-μm GaAsSb quantum-well lasers directly grown on GaAs substrates

M Yamada, T Anan, K Tokutome… - IEEE Photonics …, 2000 - ieeexplore.ieee.org
GaAsSb quantum-well (QW) edge-emitting lasers grown on GaAs substrates were
demonstrated. The optical quality of the QW was improved by optimizing the growth …
被引用次数：64 相关文章 所有 4 个版本

CW room-temperature visible single quantum well Ga0. 73Al0. 27As diode lasers grown by metalorganic chemical vapour deposition

RD Burnham, DR Scifres, W Streifer - Electronics Letters, 1982 - IET
Room-temperature CW laser operation at 7125 Å has been achieved in a (Ga1− xAlxAs, x̃0.
27) single quantum well double heterostructure (SQW-DH) diode laser. The laser consists of …
被引用次数：13 相关文章 所有 4 个版本

Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant

X Yang, MJ Jurkovic, JB Heroux, WI Wang - Electronics Letters, 1999 - IET
Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown
by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low …
被引用次数：51 相关文章 所有 6 个版本

Room temperature operation of Al0. 17Ga0. 83Sb/GaSb multi-quantum well lasers grown by molecular beam epitaxy

Y Ohmori, S Tarucha, Y Horikoshi… - Japanese journal of …, 1984 - iopscience.iop.org
A room-temperature lasing-operation by current injection to Al 0.17 Ga 0.83 Sb/GaSb multi-
quantum well (MQW) lasers grown by molecular beam epitaxy (MBE) is demonstrated. A …
被引用次数：39 相关文章 所有 8 个版本

Low-threshold GaInAsSb/AlGaAsSb quantum well laser diodes emitting near 2.3 µm

A Salhi, Y Rouillard, A Perona, P Grech… - Semiconductor …, 2003 - iopscience.iop.org
We report on low-threshold high-power quantum well diode lasers emitting near 2.3 µm
based on the GaInAsSb/AlGaAsSb system. The threshold current density per quantum well …
被引用次数：64 相关文章 所有 6 个版本

OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers

CA Wang, HK Choi - Journal of Electronic Materials, 1997 - Springer
GaInAsSb and AlGaAsSb alloys have been grown by organometallic vapor phase epitaxy
(OMVPE) using all organometallic sources, which include tritertiarybutylaluminum …
被引用次数：22 相关文章 所有 6 个版本
[PDF] osti.gov

GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

JF Klem, O Blum, SR Kurtz, IJ Fritz… - Journal of Vacuum …, 2000 - pubs.aip.org
We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum-well
structures grown by molecular-beam epitaxy for use in long-wavelength lasers on GaAs …
被引用次数：72 相关文章 所有 8 个版本