The development of InGaAsP lattice-matched to InP as a suitable material for a range of
electronic devices is reviewed. Currently accepted values of fundamental material …

Publisher Summary This chapter discusses the liquid-phase epitaxy (LPE) growth of
InGaAsP and InGaAs—that is, the In-Ga-As-P and In-Ga-As phase diagrams, LPE growth …

Band‐gap and lattice constant data are presented characterizing the transient composition
that occurs at the onset of liquid‐phase‐epitaxial growth of InGaAsP on InP substrates. This …

Two quaternary Ill-V systems are available for InP based opto and micro-electronics:
InGaAsP and InGaAlAs. The first has been extensively studied with remarkable success for …

InGaAsP layers grown by liquid-phase epitaxy on InP substrates can form lattice-matched
heterojunctions sensitive to light in the wavelength range from 0.9 to 1.7 μm. A simple model …

Liquid‐phase epitaxial layers of InAs1− x P x were grown in the range of 0< x< 0. 735 on
{1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's …

Liquid phase epitaxy has been employed for the growth of InP-InGaAsP lattice-matched
heterojunctions. The epitaxial layers were grown at 650 625~ on (100),(lll) A, and (lll) B …

The distribution coefficients for the growth of lattice-matched InGaAsP on (IOO)-InP
substrates in the 1.15-1.31-/. Lm spectral range have been determined. These results have …

InP is a key semiconductor for the production of optoelectronic and photonic devices. Its
related compounds, such as InGaAsP alloy, have been realized as very important materials …

The possibility of using liquid phase epitaxy (LPE) to grow GaAs x Sb1− x on InP substrates
has been investigated. Theoretical phase‐diagram calculations for the GaAsSb system …