Liquid-phase epitaxial growth of InP and InGaAsP alloys
SH Groves, MC Plonko - Journal of Crystal Growth, 1981 - Elsevier
Liquid-phase epitaxy (LPE) has been used to grow high-quality layers of InP and InGaAsP
alloys on InP substrates for a wide variety of device-development and physical …
alloys on InP substrates for a wide variety of device-development and physical …
High purity InP and InGaAsP grown by liquid phase epitaxy
LW Cook, MM Tashima, N Tabatabaie, TS Low… - Journal of Crystal …, 1982 - Elsevier
Methods for obtaining high purity InP and InGaAsP alloy epitaxial layers on (100)-oriented
InP substrates using liquid phase epitaxy have been explored and are discussed. Net carrier …
InP substrates using liquid phase epitaxy have been explored and are discussed. Net carrier …
[引用][C] Liquid-phase epitaxy of In (As, Sb) on GaSb substrates using antimony-rich melts
JR Skelton, JR Knight - Solid-state electronics, 1985 - Elsevier
The solid solution In (As, Sb) is an important material for opto-electronic devices operating at
mid-infrared wavelengths(3-5 pm). High-performance diodes in InAs,,.,, Sb, ih g rown on …
mid-infrared wavelengths(3-5 pm). High-performance diodes in InAs,,.,, Sb, ih g rown on …
Effect of temperature on InGaAsP alloy composition
RM Lum, ML Mc Donald, EM Mack, FG Storz… - Journal of electronic …, 1995 - Springer
The influence of growth temperature on the composition of InGaAsP films grown by low
pressure metalorganic vapor phase epitaxy (MOVPE) is reported for quaternary (Q) alloys …
pressure metalorganic vapor phase epitaxy (MOVPE) is reported for quaternary (Q) alloys …
Liquid phase epitaxial In1− xGaxAsyP1− y lattice matched to< 100> InP over the complete wavelength range 0.92⩽ λ⩽ 1.65 μm
MA Pollack, RE Nahory, JC Dewinter… - Applied Physics …, 1978 - pubs.aip.org
A two-phase supercooled solution method is described for the LPE growth of
lnl_xGaxAsyPl_y on< 1 (0) lnP over the entire range of lattice-matched compositions, 0~ y< …
lnl_xGaxAsyPl_y on< 1 (0) lnP over the entire range of lattice-matched compositions, 0~ y< …
Liquid phase epitaxy
E Kuphal - Applied Physics A, 1991 - Springer
This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of
semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and …
semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and …
Vapor-phase epitaxy of GaInAsP and InP
P Vohl - Journal of Crystal Growth, 1981 - Elsevier
This paper reports on two studies of vapor-phase epitaxy on InP substrates. The first deals
with the growth of lattice-matched GaInAsP alloys, using PCl 3 and AsCl 3 as the sources of …
with the growth of lattice-matched GaInAsP alloys, using PCl 3 and AsCl 3 as the sources of …
[引用][C] InP bulk crystal growth and characterization
DF Bliss, O Wada, H Hasegawa - InP-Based Materials and …, 1999 - Wiley-Interscience
Liquid phase epitaxial growth of lattice‐matched Al0. 48In0. 52As on InP
K Nakajima, T Tanahashi, K Akita - Applied Physics Letters, 1982 - pubs.aip.org
FIG. 2. Growth conditions to obtain AI. In, _xAs layers with smooth surfaces. approximately
the real liquidus temperatures of the solution compositions on the basis of the calculated …
the real liquidus temperatures of the solution compositions on the basis of the calculated …
Phase diagram, crystal growth, and band structure of InxGa1-xAs
TY Wu, GL Pearson - Journal of Physics and Chemistry of Solids, 1972 - Elsevier
The liquidus and solidus lines in the In-rich region of the In Ga As system have been
established. The liquidus data were obtained by measuring the amount of InAs which …
established. The liquidus data were obtained by measuring the amount of InAs which …