Growth experiments on selected areas on InP substrates were made with expitaxial films of
InP and InGaAsP, which are important for applications in modern glass-fibre communication …

Growth of InGaAs lattice matched to InP was achieved for the first time on the (100)
orientation of InP by liquid-phase epitaxy. Growth conditions and melt composition for such a …

In LPE growth of InGaAsP with an energy gap corresponding to about 1.3 μm wavelength on
(100) InP substrates, lattice constants and energy gaps are senstive to the growth …

The compositional dependence of the electronic band structure of (Al x Ga1− x) 0.52 In0.
48P lattice matched to GaAs is reported. Epitaxial layers, grown by solid‐source molecular …

The liquid‐phase epitaxy of InGaAsP periodic structures is reported. A conventional
horizontal sliding boat or a computer‐controlled rotating crucible was used to grow two types …

Crystal growth techniques for the metal chloride-hydride vapor-phase epitaxy of InGaAsP
alloys are described. The growth conditions and gas flows for alloys with energy bandgap …

We report for the first time that high quality pseudomorphically strained InAs 1-x P x/InP and
InAs/InP (3% lattice mismatch) superlattices (SL) and strained multi-quantum wells (SMQWs) …

The liquid‐phase epitaxy (LPE) growth of InGaPAs grown on (100) GaAs substrate has been
studied under various growth conditions over the whole solid composition range. It has been …

The substrate orientation dependence of the growth rate has been studied for the LPE
growth of In~ _~ Ga~ As on InP under various growth conditions. The growth rate on the …

Single-crystal epitaxial layers of InAs1-~ Sbx have been grown using a steady-state, liquid
phase epitaxial growth technique. In the range of 0~ x~ 0.35 they were grown on InAs …