The step cooling technique for liquid phase epitaxy was used to grow In 0.75 Ga 0.25 As
0.56 P 0.44 thin films on InP substrates. The optimum growth temperature is 635° C with a …

Single-crystal epitaxial layers of InAs1-~ Sbx have been grown using a steady-state, liquid
phase epitaxial growth technique. In the range of 0~ x~ 0.35 they were grown on InAs …

The liquid− phase epitaxial growth of In x Ga1− x As (0< x≲ 0.15) single and multiple layers
on GaAs substrates has been studied. Growth on 111B− oriented substrates results in …

A precise determination of the phase diagram of 3–5 compounds (GaP− GaAs− InP) has
been performed. The method consists of measurements of the solubility of GaP and GaAs in …

Direct-bandgap InAlP alloy has the potential to be an active material in nitride-free yellow-
green and amber optoelectronics with applications in solid-state lighting, display devices …

Highly uniform AlGaAs GaAs and InGaAs (P) InP epitaxial layers have been grown in a
vertical rotating susceptor MOVPE reactor capable of accommodating three 2′ wafers. The …

Liquidus and solidus data are presented for the 800~~ and 900~ isotherms in the In-rich
corner of the In-Ga-As phase diagram. A simple solution model gives excellent agreement …

Optoelectronic devices involving epitaxial layers grown by MOCVD within the GaInAsP and
GaInAlAs material systems lattice matched to InP are reviewed. Besides discrete long …

The Inx Gal _ x P ternary is a semiconductor material potentially useful for optoelectronic
devices in the visible spectral range. However, phase-diagram data needed for liquid phase …

In this paper, we determine the optical constants and carrier mobilities of Si-doped and Be-
doped InAlAs lattice matched to InP. The samples were grown using molecular beam …