We present a complete investigation of crystalline, optical, and electrical properties of
molecular‐beam‐epitaxial‐grown AlGaInAs lattice matched to InP covering the whole range …

Full widths at half-maximum intensity of the (004) Bragg reflecton peak as small as 24 arcs
are obtained from InGaAs epilayers 4-6/-lm thick. Such linewidth is the narrowest reported …

It is now well admitted that most quaternary III–V compounds show unstable regions in the
temperature range commonly used in epitaxy. For instance, according to these authors, the …

The temperature dependence (from 6 to 300 K) of the near band gap photoluminescence
(PL) of n‐type InGaAsP is investigated. These layers, epitaxially grown on InP substrates …

Liquid phase epitaxial growth of (Al x Ga1− x) 1− z In z P y As1− y lattice matched to GaAs is
investigated. Uniform layers with high emission efficiency are obtained for x∼ 0.3 and y< …

Auger depth profiles of InGaAsP‐InP heterojunctions grown by liquid phase epitaxial
techniques under different lattice‐mismatch conditions have been measured. Results are …

ABSTRACT X-ray double crystal diffractometry (DCD), low temperature photoluminescence
(PL), and secondary ion mass spectrometry (SIMS) have been used to characterize single …

A phosphorus beam source utilizing thermal decomposition of InP is employed in a
molecular beam epitaxy system. Quaternary InGaAsP films with reproducible P and As …

The conditions for LPE-growth of In 0.53 Ga 0.47 As lattice matched to InP and growth of InP
on In 0.53 Ga 0.47 As are discussed. The distribution coefficient of Ga in the In-Ga-As melt is …

ABSTRACT Undoped Inl-zGaxAs (x~ 0.5) crystal films with very homogeneous composition
were grown on InP substrates by liquid phase epitaxy. Study was made on physical …