High‐quality InAlAs grown by organometallic vapor phase epitaxy
L Aina, M Mattingly - Applied physics letters, 1987 - pubs.aip.org
High‐quality InAlAs with excellent photoluminescence and low electron concentrations has
been grown by organometallic vapor phase epitaxy (OMVPE). For InAlAs lattice matched to …
been grown by organometallic vapor phase epitaxy (OMVPE). For InAlAs lattice matched to …
Composition dependence of band gap and type of lineup in In1− x− yGaxAlyAs/InP heterostructures
J Böhrer, A Krost, DB Bimberg - Applied physics letters, 1993 - pubs.aip.org
In,-,-,, Gafil,, As is grown lattice matched by low pressure metalorganic chemical vapor
deposition on InP and characterized using low temperature photoluminescence …
deposition on InP and characterized using low temperature photoluminescence …
High-uniformity liquid phase epitaxial InGaAsP (λ= 1.3 μm)
PE Brunemeier, TJ Roth, N Holonyak Jr… - Journal of crystal …, 1984 - Elsevier
It is shown that the InGaAsP quaternary grown by constant temperature liquid phase epitaxy
on InP substrates can, under special conditions of growth solution supersaturation and …
on InP substrates can, under special conditions of growth solution supersaturation and …
Liquid‐Phase Epitaxy of In× GA 1−× As
GA Antypas - Journal of The Electrochemical Society, 1970 - iopscience.iop.org
InxGa1-~ As layers grown by liquid-phase epitaxy were obtained in the range of 0.0< x<
0.23, when grown on the (lll Ga) plane of GaAs. Attempts to grow alloys on the (if0),(ill …
0.23, when grown on the (lll Ga) plane of GaAs. Attempts to grow alloys on the (if0),(ill …
Long‐range order in InAsSb
HR Jen, KY Ma, GB Stringfellow - Applied physics letters, 1989 - pubs.aip.org
For the first time,{Ill} ordering (CuPt type) has been observed in InAs!-x Sb, alloys in a wide
compositional range from x= 0.22 to 0.88. The order-induced spots show the highest …
compositional range from x= 0.22 to 0.88. The order-induced spots show the highest …
Relation between photoluminescence wavelength and lattice mismatch in metalorganic vapor‐phase epitaxy InGaAs/InP
E Kuphal, A Pöcker, A Eisenbach - Journal of applied physics, 1993 - pubs.aip.org
The photoluminescence (PL) wavelength of high‐purity 0.5‐μm‐thick metalorganic vapor‐
phase epitaxy In1− x Ga x As/InP was measured at room temperature (RT) as a function of …
phase epitaxy In1− x Ga x As/InP was measured at room temperature (RT) as a function of …
Photoluminescence and double‐crystal x‐ray study of InGaAs/InP: Effect of mismatch strain on band gap
IC Bassignana, CJ Miner, N Puetz - Journal of applied physics, 1989 - pubs.aip.org
Epitaxial layers of InGaAs on InP are the building blocks in optoelectronic device fabrication,
where the dependence of the band gap on composition is utilized in device design. The …
where the dependence of the band gap on composition is utilized in device design. The …
Optical-absorption coefficient of As/InP
FR Bacher, JS Blakemore, JT Ebner, JR Arthur - Physical Review B, 1988 - APS
Optical-absorption coefficient data are presented over the 0.7–1.5-eV spectral range (825–
1750 nm) for In 1− x Ga x As/InP; both at the lattice-matched condition x= 0.47 and for the …
1750 nm) for In 1− x Ga x As/InP; both at the lattice-matched condition x= 0.47 and for the …
A study of zinc doping in metallo‐organic chemical vapor deposition of InP
AW Nelson, LD Westbrook - Journal of applied physics, 1984 - pubs.aip.org
Over the last ten years the quality of both bulk and epitaxial InP has improved substantially
and the material is now receiving a great deal of attention as its properties are utilized in a …
and the material is now receiving a great deal of attention as its properties are utilized in a …