Over the last ten years the quality of both bulk and epitaxial InP has improved substantially
and the material is now receiving a great deal of attention as its properties are utilized in a …

Epitaxial layers of InGaAs on InP are the building blocks in optoelectronic device fabrication,
where the dependence of the band gap on composition is utilized in device design. The …

The liquidus isotherm in the In‐rich corner of the In‐Ga‐As system at 650° C was
experimentally determined by an improved seed dissolution technique using InP seeds. The …

Phase diagram for LPE growth of GaInAsP layers lattice matched to InP substrates Page 1
118 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. QE-17, NO. FEBRUARY 1981 …

The results are reported of our investigations into the application of rare-earth elements in
the liquid phase epitaxy technology of InP, InGaAsP and devices based on these …

We have measured the refractive index of InP and of liquid‐phase‐epitaxy–grown InGaAsP
layers on InP in the transparent wavelength region using a Brewster‐angle method. The …

X-ray double crystal diffractometry has been used to assess the crystal quality of
InGaAsP/InP single heterostructures grown by liquid phase epitaxy. Diffraction profiles have …

High‐quality InGaAsP lattice matched to InP was grown by low‐pressure metalorganic vapor
phase epitaxy using ethyldimethylindium (EDMIn), tertiarybutylphosphine (TBP), and …

Fe‐doped semi‐insulating In1− x Ga x As y P1− y (0≤ y≤ 1, y= 2.2 x) epitaxial layers lattice
matched to InP with nearly intrinsic carrier concentrations have been successfully grown …

Crystal growth of InP on GaAs by vapor phase epitaxy is reported. It is demonstrated that
good quality InP epitaxial layers with featureless surface morphology can be grown on GaAs …