The second-order nonlinear response of bulk GaAs in the terahertz (THz) range is mapped
via the THz field emitted after near-infrared interband excitation. Phase-resolved THz …

Ultrafast phase-resolved terahertz propagation experiments reveal the nonlinear optical
response of shallow donor transitions in n-type GaAs. At a lattice temperature of 100 K …

We have investigated terahertz (THz) sideband generation from bulk GaAs using intense
pulses of coherent THz (or far-infrared) radiation from a free electron laser. In contrast to …

Excitation of an n-type GaAs layer by intense ultrashort terahertz pulses causes coherent
emission at 2 THz. Phase-resolved nonlinear propagation experiments show a picosecond …

Terahertz radiation and its nonlinear optical manipulation may possess potential for a variety
of applications in next‐generation electronics and optics. Pioneering studies have shown …

We investigated the interaction between an intense terahertz (THz) pulse and excitons in
bulk GaAs by using THz pump near-infrared (NIR) optical probe spectroscopy. We observed …

Nonlinear two-dimensional terahertz (2D-THz) spectroscopy at frequencies of the emitted
THz signal different from the driving frequencies allows for exploring the regime of (off-) …

We investigate the self-phase modulation (SPM) of a single-cycle terahertz pulse in a
semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of …

Semiconductor nonlinearity in the range of terahertz (THz) frequency has been attracting
considerable attention due to the recent development of high-power semiconductor-based …

Nonlinear dynamics of free carriers in direct bandgap semiconductors at terahertz (THz)
frequencies is studied using the intense few-cycle source available at the Advanced Laser …