3D integration including Through Silicon Vias is more and more considered as the solution
to overcome conventional 2D IC issues. In this way, TSV analytical equivalent models are …

Evaluation of Through Silicon Via (TSV) electrical performance is hardly required today to
improve heterogeneous 3D chip performance in the frame of a “more than Moore” approach …

High-aspect ratio (12.5) through silicon vias (TSV) made in a silicon interposer have been
electrically characterized in the direct current (dc) and microwave regimes for 3D …

Evaluation of Through Silicon Via (TSV) electrical parameters is mandatory to improve
heterogeneous 3D chip performance in the frame of a “more than Moore” roadmap. Accurate …

Abstract 3D integration is considered to be the most promising solution to overcome
challenges encountered currently in planar technologies. As an emerging technology …

High frequency characterization and modeling of Through Silicon Vias (TSVs) for new 3D
chip staking are presented in this paper. Works focus on high density TSVs, up to 10 6 cm-2 …

This paper gives a comprehensive study on the modeling and design challenges of Through
Silicon Vias (TSVs) in high speed three dimensional (3D) system integration. To investigate …

3-D integration of microelectronic systems reduces the interconnect length, wiring delay, and
system size, while enhancing functionality by heterogeneous integration. Through silicon via …

In this paper we will highlight key integration issues that were encountered during the
development of the 3D-stacked IC Through Silicon Via (TSV) module and present solutions …

Three-dimensional ICs provide a promising option to build high-performance compact SoCs
by stacking one or more chips vertically. Through silicon vias (TSVs) form an integral …