An experimental method, based on infrared absorption spectroscopy, has been developed
to study ultra‐thin passivating layers on semiconductor surfaces. To characterize the …

Over the past two decades, infrared absorption spectroscopy (IRAS) has emerged as a
preeminent technique for studying semiconductor surface and interface passivation [I]. For …

Applied Surface Science 36 (1989) 240-246 Nor! a-Holland, Amsterdam AN IN S~U INFRARED
STUDY OF THE ROOM TEMPERATURE OYdDA'IION Page 1 240 Applied Surface Science 36 …

Spectra due to adsorbed oxygen species have been observed between 1200 and 600 cm–
1. A pair of bands, at 970 and 730 cm–1, which appear after exposure of silicon to oxygen …

Infrared (IR) spectra of ultrathin silicon-oxide layers, grown by pulsed F 2-laser (157 nm)
photoinduced oxidation of H-terminated Si (111) and Si (110) in an oxygen atmosphere …

Silicon oxide and hydrogen are ubiquitous in materials and processing issues in
microelectronics. This paper reviews the value of infrared absorption spectroscopy to …

Studies of the interaction of O 2 and O with Si (111) and Si (100) at a fundamental level are
reviewed. Both atomic and molecular chemisorbed species have been found on these …

The thermal oxidation of silicon is normally considered to occur via two different routes. At
higher O 2 pressures and lower temperature SiO 2 (s) film growth occurs (" passive" …

Ultrathin SiO 2 layers are of importance for the semiconductor industry. One of the
techniques that can be used to determine the chemical composition and thickness of this …

Oxygen redistribution near the interface between the epitaxial layer and substrate was
monitored with micro‐Fourier transform infrared measurements in a transversal wafer cross …