The minority carrier diffusion length, LD⁠, was directly measured in individual ZnO
nanowires by a near-field scanning photocurrent microscopy technique. The diameter …

Based on single-nanowire surface photovoltage measurements and finite-element
electrostatic simulations, we determine the surface state density, N s, in individual n-type …

The current–voltage (I–V) characteristics of single ZnO nanowires have been studied in the
humid air, dry air, vacuum, and under ultraviolet (UV) irradiation. A model of a single ZnO …

Single-crystalline zinc oxide (ZnO) nanowires (NWs) with diameters of 90–200 nm were
synthesized by the thermal evaporation method. Four-probe Ti/Au electrodes were made by …

The authors have performed variable-temperature electrical measurements on individual
single-crystalline, Mn-doped ZnO nanowires. Using a back-gated field-effect transistor …

We report the electrical properties of individual as-grown ZnO nanowires (NWs) on Si O 2∕
Si and GaN/sapphire substrates. Carrier transport in metal-semiconductor-metal junction is …

To clarify the size effect in semiconductor nanowires with decreasing diameters but not yet
reaching the quantum confinement region, single crystalline zinc oxide nanowires with …

We conduct a comprehensive investigation into the electronic and magnetotransport
properties of ZnO nanoplates grown concurrently with ZnO nanowires by the vapor-liquid …

A review on the tunable electrical properties of ZnO nanowire field-effect transistors (FETs) is
presented. The FETs made from surface-tailored ZnO nanowire exhibit two different types of …

We have measured the intrinsic electrical resistivities, ρ (T), of three individual single-
crystalline ZnO nanowires (NWs) from 320 down to 1.3 K. The NWs were synthesized via …