Spin-Transfer Torque RAM (STTRAM) is a promising alternative to SRAMs in on-chip
caches, due to several advantages, including non-volatility, low leakage, high integration …

Spin-Transfer Torque RAM (STT-RAM), a promising alternative to SRAM for reducing
leakage power consumption, has been widely studied to mitigate the impact of its …

Spin-Transfer Torque RAM (STT-RAM) is widely considered a promising alternative to
SRAM in the memory hierarchy due to STT-RAM's non-volatility, low leakage power, high …

Spin-transfer torque RAM (STT-RAM) caches are foreseen to replace traditional static RAM
caches because of their nonvolatile nature and high density. Multilevel cell (MLC) STT …

Spin-transfer torque RAM (STT-RAM) has been proposed to build on-chip caches because
of its attractive features such as high storage density and ultra low leakage power. However …

Spin-Torque Transfer RAM (STT-RAM) is a promising candidate for SRAM replacement
because of its excellent features, such as fast read access, high density, low leakage power …

Spin-Transfer Torque RAM (STT-RAM) is a promising cache candidate studied frequently in
recent years. Compared to the traditional SRAM, The STT-RAM is more promising for future …

Relaxed retention (or volatile) spin-transfer torque RAM (STT-RAM) has been widely studied
as a way to reduce STT-RAM's write energy and latency overheads. Given a relaxed …

High density, low leakage and non-volatility are the attractive features of Spin-Transfer-
Torque-RAM (STT-RAM), which has made it a strong competitor against SRAM as a …

Spin-Transfer Torque RAM (STT-RAM) exhibits advantages like high density, non-volatility,
and low leakage power consumption, making them a plausible successor to SRAM in …