Self-assembled strained semiconductor nanostructures have been grown on GaAs
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …

We report a high detectivity of 31011 cm Hz1/2/W at 78 K for normal-incidence quantum dot
infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active …

Quantum dot infrared photodetectors (QDIPs) have emerged as attractive devices for
sensing long wavelength radiation. Their principle of operation is based on intersublevel …

The physical properties of detectors based on intraband optical absorption in quantum dots
is described and examined in the interest of providing a competitive alternative infrared (IR) …

We report on the analysis of thermally-limited operation of quantum-dot infrared
photodetectors (QDIPs). A device model is developed and used to calculate the QDIP …

A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum
dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for …

We present data and calculations and examine the factors that determine the detectivities in
self-assembled InAs and InGaAs based quantum dot infrared photodetectors (QDIPs). We …

This paper discusses key issues related to the quantum dot infrared photodetector (QDIP).
These are the normal incidence response, the dark current, and the responsivity and …

Quantum dot infrared photodetectors (QDIPs) have made significant progress after their
early demonstration about a decade ago. We review the progress made by QDIP technology …

We describe the concept of the submonolayer quantum dot infrared photodetector (SML
QDIP) and report experimental device results on long-wavelength infrared detection. An …