In this study, we examined the E− band luminescence of a GaAs: N δ-doped superlattice
(SL) grown by metal organic vapor phase epitaxy with 0.15% nitrogen (N) using two …

The photoabsorption characteristics of GaAs: N δ-doped superlattices (SLs) are
investigated. Periodic insertion of N δ-doped layers into GaAs induces the formation of …

GaAs: N δ-doped superlattices (SLs) consisting of alternating layers of undoped and N δ-
doped GaAs were fabricated by molecular beam epitaxy (MBE) as possible candidates for …

Nonradiative recombination (NRR) centers in GaAs: N δ-doped superlattice (SL) structure
grown by metal organic vapor phase epitaxy (MOVPE) are studied by two-wavelength …

Abstract G a A s/A lx Ga 1− x As multiple quantum well structures containing nipi-δ-doping
superlattices were grown by low-pressure-metalorganic vapor phase epitaxy. Optical …

The performance of intermediate band solar cells using a GaAs: N δ-doped superlattice (SL)
as the optical absorber is analyzed. In GaAs: N δ-doped SLs, both of the E+ and E-bands …

We investigated luminescence characteristics of the (GaP) n (GaAs) n atomic layer
superlattices grown on the [001] GaAs substrate by pulsed jet epitaxy. In the single …

We use two-wavelength-excited photoluminescence (PL) to investigate nonradiative
recombination (NRR) centers in GaAs: N δ-doped superlattice (SL) structures grown by …

We fabricated GaAs: N δ-doped superlattices (SLs) by molecular beam epitaxy and
investigated their potential as an intermediate-band photoabsorber in high-efficiency solar …

Nitrogen δ-doped GaAs superlattices (SLs) were fabricated, and their energy structures
were investigated. A number of strong transition signals are observed in photoreflectane …