The diffusion current of fully depleted (FD) nanoscale surrounding-gate (SG) metal–oxide–
semiconductor field effect transistors (MOSFETs) with a doped channel was physically …

The threshold voltage (V th) was modeled in a simple closed form by considering drain bias
(V DS) for fully depleted (FD) symmetric double-gate (DG) n-channel metal–oxide …

We present a modified surrounding-gate metal–oxide–semiconductor field effect transistor
(MOSFET), in which the gate consists of two metals with different work functions, and single …

A unified carrier-transport model for a nanoscale surrounding-gate metal-oxide-
semiconductor field-effect transistor (SG MOSFET) is developed. The model is based on …

A novel cylindrical surrounding-gate metal–oxide–semiconductor field effect transistor with
high-κ gate dielectric and tri-material gate stack (TMGCSG MOSFET) is presented. The …

In this paper, we present a compact model for undoped short-channel cylindrical
surrounding-gate MOSFETs. The drain-current model is expressed as a function of the …

An analytic and continuous direct-current model for cylindrical doped surrounding-gate
metal-oxide-semiconductor field-effect transistors (SGMOSFETs) including interface-trap …

In this paper we present a new analytical physics-based drain current model for fully
overlapped and partially overlapped lightly-doped-drain metal-oxide-semiconductor field …

Based on the quasi-two-dimensional (2D) solution of Poisson's equation in two continuous
channel regions, an analytical threshold voltage model for short-channel junctionless dual …

Based on the subthreshold region model described in Paper I [Cho et al., J. Appl. Phys. 113,
214506 (2013)], a continuous drain current model with a variation of channel doping …