In this paper, for the first time, we present a circuit model of InGaAs-GaAs self-assembled
quantum dot (QD) lasers (SAQDLs) based on the standard rate equations. By using the …

In this paper, for the first time, we present a small signal circuit model of InGaAs/GaAs self-
assembled quantum dot (QD) laser, based on the standard rate equations. By using the …

A rate-equation model, in which three discrete quantum-dot (QD) energy levels are assumed
and all possible relaxation paths and carrier transport in the GaAs barrier are considered, is …

Dynamic, modulation, and output power (OP) characteristics of In (Ga) As/GaAs self-
assembled quantum-dot lasers (SAQDLs) using multi-mode and multi-population rate …

The important tradeoff between frequency bandwidth and single-mode behavior of
multimode self-assembled InAs-GaAs quantum-dot (QD) laser by increasing temperature or …

In this paper, a theoretical model is used to investigate the lasing characteristics of
InGaAs/GaAs quantum-dot lasers. The rate equations for InGaAs/GaAs are numerically …

The effects of temperature (homogeneous broadening (HB)) on output power, gain
spectrum, and light–current (L–I) characteristics of self-assembled quantum-dot lasers …

We have developed a simple theoretical model to account for the effects of different p-
doping levels on the temperature-dependent performance of InAs/GaAs self-assembled …

Comparing simulation results with experimental findings, it is found that considering
nonlinear optical gain is quite essential to accurately obtain dynamic and static …

In this paper, we present the results of a theoretical model built to describe the temperature-
dependent lasing characteristics of InAs-InGaAs quantum-dot (QD) lasers operating at …