A 24-31GHz 28nm FD-SOI CMOS Balanced Power Amplifier Robust to 3: 1 VSWR for 5G Application

G Diverrez, E Kerhervé… - 2022 52nd European …, 2022 - ieeexplore.ieee.org
This paper presents a broadband balanced power amplifier (PA) for 5G mm-wave
applications. Thanks to its balanced architecture, the PA exhibits a great robustness to active …

A 22-42GHz 28nm CMOS SOI 3: 1 VSWR Resilient Balanced Power Amplifier for 5G Application

G Diverrez, E Kerhervé, M De Matos… - 2023 18th European …, 2023 - ieeexplore.ieee.org
This paper presents a broadband balanced power amplifier (PA) implemented in a 28 nm
CMOS FD-SOI process with a compact size of 0.82 mm^2 for mm-wave 5G application …

A 140-GHz 14-dBm power amplifier using power combiner based on symmetric balun in 65-nm bulk CMOS

D Yamazaki, T Horikawa, T Iizuka - 2020 IEEE International …, 2020 - ieeexplore.ieee.org
This paper proposes a 140-GHz power amplifier (PA) with 14-dBm saturated output power.
Our PA uses a symmetric-balun-based power combiner in D-band, which relaxes the …

A 0.9-V 36% PAE Broadband Continuous Class-F CMOS mm-Wave Power Amplifier Using Novel Current-Mode Power Combiner

A Batabyal, RH Zele, SK Khyalia… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This article presents a fully integrated broadband two-stage differential millimeter-wave (mm-
Wave) power amplifier (PA) based on a novel current-mode power combiner. New harmonic …

A 28-GHz highly efficient CMOS power amplifier using a compact symmetrical 8-way parallel-parallel power combiner with IMD3 cancellation method

H Ahn, I Nam, O Lee - 2020 IEEE Radio Frequency Integrated …, 2020 - ieeexplore.ieee.org
This paper presents a linear CMOS power amplifier (PA) for mm-wave 5G applications. A
compact 8-way parallel-parallel power combiner is proposed to increase Pout with low loss …

A 30-40 GHz Continuous Class F−1 Power Amplifier with 35.8% Peak PAE in 65 nm CMOS Technology

ZH Wang, CN Chen, H Wang - 2020 IEEE International …, 2020 - ieeexplore.ieee.org
This paper presents a continuous-mode inverse Class-F (ie, Class-F-1) power amplifier
design to achieve both high efficiency and wide bandwidth for 5G communications. The …

A 28GHz self-contained power amplifier for 5G applications in 28nm FD-SOI CMOS

B Moret, V Knopik, E Kerherve - 2017 IEEE 8th Latin American …, 2017 - ieeexplore.ieee.org
This paper presents a 28 GHz CMOS balanced Power Amplifier (PA) with integrated
quadrature hybrid couplers to achieve robust load insensitivity for 5G phased array …

A 25–35 GHz neutralized continuous class-F CMOS power amplifier for 5G mobile communications achieving 26% modulation PAE at 1.5 Gb/s and 46.4% peak PAE

SN Ali, P Agarwal, S Gopal… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper presents a high-efficiency neutralized continuous class-F (CCF) CMOS power
amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A …

A 40–67 GHz Power Amplifier With 13 dBm and 16% PAE in 28 nm CMOS LP

M Bassi, J Zhao, A Bevilacqua… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
Pushed by the availability of large fractional bandwidths, many well-established applications
are focusing mm-wave spectrum for product deployment. Generation of broadband power at …

High PAE CMOS power amplifier with 44.4% FBW using superimposed dual-band configuration and DGS inductors

OZ Alngar, A Barakat… - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
A two-stage 180-nm CMOS wideband (14–22 GHz) power amplifier (PA) with a
superimposed staggered technique and defected-ground-structure (DGS) inductors is …