In this paper, we describe the design of the first reported full W-band (75–110 GHz) power
amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride …

This brief presents a three-stage wideband power amplifier (PA) monolithic microwave
integrated circuit (MMIC) using 100 nm GaN-on-Si process. A synthesized matching strategy …

We report on the first-ever GaN power amplifier MMICs covering the full W-band (75-110
GHz). They can provide more than 8 dB (3-stage version) and 11 dB (4-stage) of gain over …

In this article, we present a set of gallium nitride (GaN) power amplifiers (PAs) that provide
state-of-the-art performance within the D-band (110-170 GHz) and G-band (140-220 GHz) …

A three-stage W-band GaN monolithic microwave integrated circuit power amplifier (MMIC
PA) is reported. Electron-beam lithography has been employed to define a 100-nm T …

This paper presents an 80-122-GHz low-noise power amplifier (LNPA) monolithic
microwave integrated circuit (MMIC) fabricated in a 70-nm gallium nitride (GaN) high …

This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned
circuit for a higher power density per area and a higher power-added efficiency (PAE) using …

Three power amplifier MMICs at Ka-band frequencies are reported in this paper. The MMICs
are realized using AlGaN/GaN HEMTs with a gate length of 100 nm. Two single-stage …

In this article, we present the analysis, design, and implementation of a wideband 10-W
monolithic microwave integrated circuit power amplifier (PA), fabricated in a low-cost 0.1-μm …

This paper presents a high power, high efficiency monolithic microwave integrated circuit
(MMIC) amplifier developed using commercially available 0.25 μm AlGaN/GaN technology …