The GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electron spin
relaxation in the satellite X valley of indirect band gap Al 0.63 Ga 0.37 As epitaxial layers …

GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electron spin
relaxation in the satellite X-valley of indirect band gap Al0. 63Ga0. 37As epitaxial layers …

The impact of inter-valley scattering in modifying the density of optically injected spin
polarized electrons in Al x Ga 1− x As/GaAs heterostructure is investigated. Polarization …

GaAs/AlGaAs multi quantum well (QW) architecture is employed to study the optical injection
of spin polarized electrons in Al 0.22 Ga 0.78 As material over the excitation energy range of …

GaAs/AlGaAs (110) multiple quantum wells (MQWs) were grown by solid source molecular
beam epitaxy (MBE) with a valved arsenic cracker cell. The optical properties of the …

Multivalley spin relaxation in n-type bulk GaAs in the presence of high electric field is
investigated from the microscopic kinetic spin Bloch equation approach with the Γ and L …

The effect of a lateral electric current on the photoluminescence H band of an AlGaAs/GaAs
heterostructure is investigated. The photoluminescence intensity and optical orientation of …

The dynamics of exciton recombination and spin relaxation in thin (Ga, Al)(Sb, As)/AlAs
quantum wells (QWs) with indirect band gap are studied. The band alignment in these QWs …

Time-resolved optical spectroscopy experiments in (111)-oriented GaAs/AlGaAs quantum
wells (QWs) show a strong electric field dependence of the conduction electron spin …

We propose a new model for the DX center in Al x Ga 1-x As, for which symmetry-conserving
lattice relaxation (breathing distortion) is followed by successive symmetry-lowering lattice …