A 31 GHz 2-Stage Reconfigurable Balanced Power Amplifier with 32.6dB Power Gain, 25.5% PAEmax and 17.9dBm Psatin 28nm FD-SOI CMOS
F Torres, M De Matos, A Cathelin… - 2018 IEEE Radio …, 2018 - ieeexplore.ieee.org
In this paper, a 31GHz reconfigurable balanced 2-stage power amplifier (PA) integrated in
28nm FD-SOI CMOS technology is demonstrated aiming for SoC implementation. Fine grain …
28nm FD-SOI CMOS technology is demonstrated aiming for SoC implementation. Fine grain …
A 28GHz two-way current combining stacked-FET power amplifier in 22nm FD-SOI
We present a two-way current combining power amplifier (PA) for 28GHz wireless
communication. To boost the saturated output power (P SAT) and maintain a high power …
communication. To boost the saturated output power (P SAT) and maintain a high power …
A 28GHz self-contained power amplifier for 5G applications in 28nm FD-SOI CMOS
B Moret, V Knopik, E Kerherve - 2017 IEEE 8th Latin American …, 2017 - ieeexplore.ieee.org
This paper presents a 28 GHz CMOS balanced Power Amplifier (PA) with integrated
quadrature hybrid couplers to achieve robust load insensitivity for 5G phased array …
quadrature hybrid couplers to achieve robust load insensitivity for 5G phased array …
A 130-151 GHz 8-Way Power Amplifier with 16.8-17.5 dBm Psat and 11.7-13.4% PAE Using CMOS 45nm RFSOI
S Li, GM Rebeiz - 2021 IEEE Radio Frequency Integrated …, 2021 - ieeexplore.ieee.org
This paper presents a D-band linear power amplifier (PA) with high gain, high output power
and high efficiency using CMOS 45nm RFSOI process. An 8-way (4-way differential) power …
and high efficiency using CMOS 45nm RFSOI process. An 8-way (4-way differential) power …
A 27 GHz adaptive bias variable gain power amplifier and T/R switch in 22nm FD-SOI CMOS for 5G antenna arrays
C Elgaard, S Andersson, P Caputa… - 2019 IEEE Radio …, 2019 - ieeexplore.ieee.org
A 27 GHz fully integrated, variable gain, two stage Power Amplifier (PA) and a
Transmit/Receive (T/R) switch targeting 5G antenna array systems are presented. The PA …
Transmit/Receive (T/R) switch targeting 5G antenna array systems are presented. The PA …
Ka-band orthogonal load-modulated balanced amplifier in 22 nm CMOS FDSOI
An integrated orthogonal load-modulated balanced amplifier (OLMBA) is designed and
fabricated using 22 nm CMOS FDSOI. The input control signal in OLMBA is reflected back to …
fabricated using 22 nm CMOS FDSOI. The input control signal in OLMBA is reflected back to …
A 21-dBm 3.7 W/mm² 28.7% PAE 64-GHz power amplifier in 22-nm FD-SOI
This letter presents the design of a 64-GHz power amplifier (PA) in a 22-nm FD-SOI CMOS
technology. Benefiting from optimized pseudodifferential cascode gain cells as well as the …
technology. Benefiting from optimized pseudodifferential cascode gain cells as well as the …
Ka-Band 3-Stack Power Amplifier with 18.8 dBm Psat and 23.4 % PAE Using 22nm CMOS FDSOI Technology
This paper presents a fully integrated, three-stack power amplifier for 5G wireless systems,
designed and fabricated using 22nm CMOS FDSOI technology. The frequency of operation …
designed and fabricated using 22nm CMOS FDSOI technology. The frequency of operation …
A 24-31GHz 28nm FD-SOI CMOS Balanced Power Amplifier Robust to 3: 1 VSWR for 5G Application
G Diverrez, E Kerhervé… - 2022 52nd European …, 2022 - ieeexplore.ieee.org
This paper presents a broadband balanced power amplifier (PA) for 5G mm-wave
applications. Thanks to its balanced architecture, the PA exhibits a great robustness to active …
applications. Thanks to its balanced architecture, the PA exhibits a great robustness to active …
A 28GHz, asymmetrical, modified doherty power amplifier, in 22nm FDSOI CMOS
N Elsayed, H Saleh, B Mohammad… - … on Circuits and …, 2020 - ieeexplore.ieee.org
A 28GHz, Modified Doherty Power Amplifier (MDPA) was implemented in 22nm FDSOI
CMOS technology from GF. The MDPA adopts an asymmetrical topology utilizing two …
CMOS technology from GF. The MDPA adopts an asymmetrical topology utilizing two …