Optoelectronic devices in the mid-infrared have attracted significant interest due to
numerous potential applications in communications and sensing. Molecular beam epitaxial …

We demonstrate the potential of highly-doped semiconductor epilayers as building blocks
for mid-infrared plasmonic structures. InAs epilayers are grown by molecular beam epitaxy …

There are a range of fundamental challenges associated with scaling optoelectronic devices
down to the nano-scale, and the past decades have seen significant research dedicated to …

Plasmonic nanostructures presenting either structural asymmetry or metal-dielectric-metal
(MDM) architecture are commonly used structures to increase the quality factor and the near …

The authors demonstrate the ability of high-quality epitaxial InAs films to be used as
wavelength-flexible, low-loss, engineered plasmonic metals across the mid-infrared spectral …

We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic
absorbers and show that absorption in these structures is linked to the excitation of highly …

Infrared detectors using monolithically integrated doped semiconductor “designer metals”
are proposed and experimentally demonstrated. We leverage the “designer metal” …

Plasmonic materials are promising for applications in enhanced sensing, energy, and
advanced optical communications. These applications, however, often require chemical and …

Doping-tunable mid-infrared extraordinary transmission is demonstrated from a periodic
metal hole array patterned on n-InSb. The polarization-dependent transmission was …

Surface plasmon polaritons and their localized counterparts, surface plasmons, are widely
used at visible and near-infrared (near-IR) frequencies to confine, enhance, and manipulate …