A quasi-analytical model bas been developed for predicting the current–voltage
characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect …

Incorporating the source-to-drain tunneling current that is valid in all operating regions, an
analytical compact model is proposed in this paper for cylindrical ballistic gate-all-around n …

We propose a compact model of drain current in the ballistic mode in a cylindrical gate-all-
around metal–oxide–semiconductor field-effect transistor (MOSFET). Wave functions of …

One compact model of drain current valid in the subthreshold region, for short-channel
cylindrical gate-all-around metal-oxide-semiconductor field-effect transistors including the …

A unified carrier-transport model for a nanoscale surrounding-gate metal-oxide-
semiconductor field-effect transistor (SG MOSFET) is developed. The model is based on …

In this paper lightly doped surrounding gate (SGT) MOSFET, which is based on the exact
solution of the Poisson's equation, and the current continuity equation without the charge …

A new physically based classical model for the potential distribution of an undoped body
cylindrical gate-all-around nanowire transistor is proposed. The model is based on the …

We propose a compact model of ballistic gate-all-around metal-oxide-semiconductor field-
effect transistors. In this model, the potential distribution in the wire cross section is …

We present a compact model of the gate tunneling current in cylindrical surrounding-gate
(SG) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on quantum …

In this paper, we present a theory of electron mobility in nanowire metal-oxide-
semiconductor field-effect transistors (MOSFETs). Numerical approach consists of the Kubo …