We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain
Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and …

We present a theoretical and experimental study on the design, fabrication and
characterization of Schottky Barrier Diodes (SBD) on commercial 4H-SiC epitaxial layers …

High-temperature processing was used to improve the barrier properties of three sets of n-
type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum …

We have studied Schottky barrier contacts to n-type 4H-SiC with Cr, Mo, Ta, W, Au, and Ni.
We have focused on effects of the metal work function, measurement technique and …

A metallization scheme suitable to explore the capability of 4H–SiC for high temperature
applications was designed and fabricated on Schottky barrier diodes (SBDs). The device …

Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from
28 o C to 900 o C using a magnetron sputtering deposition system to fabricate Schottky …

Abstract The Ni-based 4H–SiC Schottky barrier diodes (SBDs) with Si intercalation have
been investigated. The electrical properties of SBDs are characterized by temperature …

The effect of surface preparation and thermal anneal on electrical characteristics of 4H-SiC
Schottky barrier diodes was investigated with the aim of finding a suitable fabrication …

This work has been focused on characterization of thick 4H‐SiC layers produced by
sublimation epitaxy. Nickel Schottky contacts have been fabricated in order to characterize …

It is known that a Schottky barrier height ( b) of metal/C-face 4H-SiC Schottky barrier diode
(SBD) differ from b of metal/Si-face 4H-SiC SBD. Furthermore, b of metal/4H-SiC SBD …