The performance of high-efficiency millimeter-wave (mm-wave) power amplifiers (PAs)
implemented in a 45-nm silicon-on-insulator (SOI) process is presented. Multistage class-AB …

Design and implementation of high-efficiency microwave and mm-wave CMOS silicon-on-
insulator (SOI) power amplifiers (PAs) based on a stacked cell approach is presented. Two …

Stacked field-effect transistor (FET) CMOS millimeter-wave power amplfiers (PAs) are
studied with a focus on design of appropriate complex impedances between the transistors …

A millimeter-wave power amplifier (PA) implemented in a commercial 45nm CMOS SOI
technology is presented. The PA design is based on stacking of two dynamically-biased …

Stacking devices in CMOS power amplifiers (PAs) increases the achievable output voltage
swing, thereby increasing the output power and efficiency, particularly at millimeter-wave …

In deeply scaled CMOS processes with gate lengths below 40 nm the analog performance
of NMOS and PMOS FETs are comparable. At the same time PMOS FETs can typically …

A Class-E tuned CMOS power amplifier (PA) operating in the 60 GHz band is presented.
Design, layout, and parasitic modeling considerations to attain high-efficiency millimeter …

A review is presented of key power amplifier (PA) performance requirements for millimeter-
wave 5G systems, along with a comparison of the potential of different semiconductor …

Series stacking of multiple devices in power amplifiers is a promising technique that has
been explored recently at millimetre‐wave frequencies to overcome some of the …

The design of broadband highly-efficient millimeter-wave (mm-Wave) Power Amplifiers (PA)
in 22-nm CMOS FD-SOI (fully depleted silicon-on-insulator) is discussed. One design uses …