We study the optical properties of GaSb/GaAs type-ІІ quantum dots (QDs) on a GaAs
substrate grown by droplet epitaxy. Ga droplets are formed on GaAs and then exposed to Sb …

We report the formation of GaAs quantum dashes on GaAs (001) substrates using droplet
epitaxy. Isotropic GaAs quantum dots at low temperature become elongated as the …

The influence of dot size and shape on the excitonic structure of GaAs/AlGaAs quantum dots
(QDs) is studied experimentally and theoretically. Almost strain-free GaAs QDs are …

We report on the ability to control the size and density of In droplets on GaAs (100)
substrates at near room temperatures using solid source molecular beam epitaxy. We …

The GaAs quantum dots (QDs) on an Al Ga As∕ Ga As (111) A surface grown by a droplet
epitaxy have a density of 1.6× 10 11∕ cm 2⁠, which is relatively higher than those (1.3× 10 …

We present research carried out on molecular beam epitaxy grown InAs/(In) GaAs quantum
dot structures for single-photon operation at long wavelengths. The optical and …

We investigated detailed structural properties of GaAs nanostructures formed by a supply of
intense As4 flux to Ga droplets. Scanning electron microscopy (SEM) and cross-sectional …

We report the direct formation of self-assembled GaAs/AlGaAs quantum dots by low-
temperature molecular beam epitaxy. To drive a three dimensional growth mode, the (1× 1) …

We demonstrate the self-assembled creation of a novel type of strain-free semiconductor
quantum dot (QD) by local droplet etching (LDE) with Al to form nanoholes in AlGaAs or AlAs …

Numerous GaAs epitaxial microcrystals having an average base size of 700 Å× 700 Å
surrounded mainly by (111) and (110) facets were fabricated on a sulfer‐terminated (S …