Thermal generation rate in quantum dots (QD) can be significantly smaller than in quantum
wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were …

We present data and calculations and examine the factors that determine the detectivities in
self-assembled InAs and InGaAs based quantum dot infrared photodetectors (QDIPs). We …

We report the device performance of normal-incidence (In, Ga) As/GaAs quantum dot
intersubband infrared photodetectors. A primary intersubband transition peak is observed at …

We report far-infrared photoconductivity in self-organized InAs/GaAs quantum dots grown by
molecular beam epitaxy. Through use of a Fourier transform infrared spectrometer, a …

Semiconductor self-assembled quantum dots are potential candidates to develop a new
class of midinfrared quantum photodetectors and focal plane arrays. In this article, we …

We have optimized the growth of multiple (40-70) layers of self-organized InAs quantum dots
separated by GaAs barrier layers in order to enhance the absorption of quantum-dot infrared …

We report a high detectivity of 31011 cm Hz1/2/W at 78 K for normal-incidence quantum dot
infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active …

Abstract Novel InAs/InGaAs quantum dots-in-a-well (DWELL) infrared photodetectors are
reviewed. These detectors, in which the active region consists of InAs quantum dots (QDs) …

We report a high detectivity middle-wavelength infrared quantum dot infrared photodetector
(QDIP). The InGaAs quantum dots were grown by self-assembly on an InGaP matrix via low …

A quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum
dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for …