Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition

RD Dupuis, PD Dapkus - Applied Physics Letters, 1977 - pubs.aip.org
Room‐temperature operation of Ga (1− x) Al x As/Ga (1− y) Al y As double‐heterostructure
lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved …
被引用次数：51 相关文章 所有 6 个版本

Room‐temperature operation of Ga (1− x) AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

RD Dupuis, PD Dapkus - Applied Physics Letters, 1977 - pubs.aip.org
Room-temperature pulsed laser operation of Ga (l_x) AlxAs/GaAs double-heterostructure
lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved …
被引用次数：238 相关文章 所有 9 个版本

Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

RD Dupuis, PD Dapkus - Applied Physics Letters, 1978 - pubs.aip.org
Room‐temperature Ga (1− x) Al x As‐GaAs DH lasers with very low threshold current
densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices …
被引用次数：81 相关文章 所有 7 个版本

Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

R Dupuis, PD Dapkus - IEEE Journal of Quantum Electronics, 1979 - ieeexplore.ieee.org
Recently Ga 1-x Al x As-GaAs double-heterostructure lasers having low threshold current
densities have been grown by metalorganic chemical vapor deposition. In addition to these …
被引用次数：117 相关文章 所有 5 个版本

700‐h continuous room‐temperature operation of AlxGa1− xAs‐GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

RD Dupuis - Applied Physics Letters, 1979 - pubs.aip.org
Constant-current continuous room-temperature (-26 C) operating times greater than 700 h
have been achieved for Alx Gal _ x As-GaAs multiple-quantum-well heterostructure injection …
被引用次数：31 相关文章 所有 8 个版本

Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy

WT Tsang - Journal of Applied Physics, 1980 - pubs.aip.org
Room‐temperature low‐current‐threshold broad‐area Fabry‐Perot Al x Ga1− x As/Al y
Ga1− y As double‐heterostructure (DH) lasers have been prepared by molecular‐beam …
被引用次数：34 相关文章 所有 8 个版本

Continuous room‐temperature operation of Ga (1− x) AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

RD Dupuis, PD Dapkus - Applied Physics Letters, 1978 - pubs.aip.org
Ga (l_x) AlxAs-GaAs double-heterostructure mesa-stripe-geometry lasers that operate
continuously at room temperature (23 q have been grown by metalorganic chemical vapor …
被引用次数：71 相关文章 所有 7 个版本

CW operation of AlxGa1−xAs/AlyGa1−yAs lasers grown by metalorganic cvd in wavelength range 760~780 nm

Y Mori, N Watanabe - Electronics Letters, 1980 - IET
Room-temperature cw operation of Al x Ga1− x As/Al y Ga1− y As dh structure visible (760~
780 nm) lasers grown by metalorganic cvd has been achieved. The planar structure lasers …
被引用次数：20 相关文章 所有 4 个版本

Single‐longitudinal‐mode cw room‐temperature Ga1− xAlxAs‐GaAs channel‐guide lasers grown by metalorganic chemical vapor deposition

RD Dupuis, PD Dapkus - Applied Physics Letters, 1978 - pubs.aip.org
Single-longitudinal-mode operation of cw room-temperature Gal_, AI, As-GaAs double-
heterostructure lasers grown by metalorganic chemical vapor deposition has been …
被引用次数：45 相关文章 所有 7 个版本

Quantum-well AlxGa1 - xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

R Dupuis, P Dapkus, R Kolbas… - IEEE Journal of …, 1979 - ieeexplore.ieee.org
Data are presented on photopumped single-and multiple-quantum-well Al x Ga 1-x As-GaAs
heterostructures grown by metalorganic chemical vapor deposition (MO-CVD) showing that …
被引用次数：17 相关文章 所有 3 个版本