GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy
SP DenBaars, CA Beyler, A Hariz, PD Dapkus - Applied physics letters, 1987 - pubs.aip.org
Atomic layer epitaxy (ALE) is a relatively new crystal growth technique which allows control
of the growth process at the monolayer level through a self‐limiting, surface‐controlled …
of the growth process at the monolayer level through a self‐limiting, surface‐controlled …
Quantum well lasers with active region grown by laser‐assisted atomic layer epitaxy
Q Chen, JS Osinski, PD Dapkus - Applied physics letters, 1990 - pubs.aip.org
Laser‐assisted atomic layer epitaxy (LALE) is used to locally deposit device‐quality material
for the first time, as demonstrated by successfully fabricating broad‐area lasers with a GaAs …
for the first time, as demonstrated by successfully fabricating broad‐area lasers with a GaAs …
Atomic layer epitaxy for the growth of heterostructure devices
SP DenBaars, PD Dapkus, CA Beyler, A Hariz… - Journal of Crystal …, 1988 - Elsevier
Atomic layer epitaxy (ALE) is a regime of metalorganic vapor phase epitaxial growth in
which uniform growth of ultra-thin epitaxial layers by a self-limiting monolayer by monolayer …
which uniform growth of ultra-thin epitaxial layers by a self-limiting monolayer by monolayer …
Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates
HP Meier, E Van Gieson, W Walter, C Harder… - Applied physics …, 1989 - pubs.aip.org
GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on GaAs (100)
substrates patterned with ridges and grooves in the [011̄] direction. Low‐temperature …
substrates patterned with ridges and grooves in the [011̄] direction. Low‐temperature …
Device‐quality epitaxial AlAs by metalorganic‐chemical vapor deposition
JJ Coleman, PD Dapkus, N Holonyak… - Applied Physics …, 1981 - pubs.aip.org
The growth and characterization of high-quality AlAs expitaxiallayers on GaAs subtrates by
metalorganic-chemical vapor deposition are described. The epitaxial layers described here …
metalorganic-chemical vapor deposition are described. The epitaxial layers described here …
Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers
F Bugge, G Beister, G Erbert, S Gramlich… - Journal of crystal …, 1994 - Elsevier
The effect of a growth interruption at the interfaces of the AlGaAs/InGaAs/GaAs quantum well
(QW) in the active region of metalorganic vapour phase epitaxy (MOVPE) grown 980 nm …
(QW) in the active region of metalorganic vapour phase epitaxy (MOVPE) grown 980 nm …
Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition
WT Tsang, AY Cho - Applied Physics Letters, 1977 - pubs.aip.org
In this paper, studies of the molecular beam epitaxy (MBE) of GaAs‐Ga1− x Al x As
multilayer structures over preferentially etched channels on GaAs substrates are described …
multilayer structures over preferentially etched channels on GaAs substrates are described …
AlyGa1‐yAs‐AlxGa1‐x as laser structures for integrated optics grown by molecular‐beam epitaxy
FK Reinhart, AY Cho - Applied Physics Letters, 1977 - pubs.aip.org
Control diodes from region III exhibited a reduced luminescence efficiency compared to the
control diodes from region I. The luminescence generally decreased with increasing Al …
control diodes from region I. The luminescence generally decreased with increasing Al …
Low-threshold patterned quantum well lasers grown by molecular beam epitaxy
E Kapon, CP Yun, JP Harbison, LT Florez, NG Stoffel - Electronics Letters, 1988 - IET
GaAs/AlGaAs patterned quantum well lasers were grown by molecular beam epitaxy on
grooved substrates. The carrier confinement and the real-index waveguiding in these lasers …
grooved substrates. The carrier confinement and the real-index waveguiding in these lasers …
Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxy
SR McAfee, DV Lang, WT Tsang - Applied Physics Letters, 1982 - pubs.aip.org
We report the first direct observation of deep levels associated with the n‐GaAs/N‐Al0.
25Ga0. 75As heterointerface in a double heterostructure (DH) laser grown by molecular …
25Ga0. 75As heterointerface in a double heterostructure (DH) laser grown by molecular …