A nonvolatile semiconductor memory, which includes an array of programmable transistor
cells, such as EPROM or EEPROM cells, provides electrical isolation without the use of field …

EEPROMs are non-volatile memory devices which are erased and programmed using
electrical signals. Within an EEPROM device are a plurality of memory cells, each of which …

As is well known, a non-volatile memory is able to continuously retain data after the
Supplied power is inter rupted. Generally, after the non-volatile memory leaves the factory …

A nonvolatile semiconductor memory, which includes an array of programmable transistor
cells, such as EPROM or EEPROM cells, provides electrical isolation without the use of field …

This invention relates generally to random access memory (RAM) circuits. More particularly,
this invention relates to static RAM circuits. Even more particularly, this invention relates to …

A method for encoding binary data into an electrically erasable memory. The memory
includes a matrix of memory cells formed as a plurality of rows (X write lines/X sense …

Electrically programmable non-volatile memories, more currently known as EPROM
memories. The memory according to the invention, using floating grid transistors with …

An EPROM cell comprises an MOS device including a floating gate electrode overlying, and
ohmically insulated from, the channel region of the MOS device, and a separate diode …

Metal Oxide Semiconductor (MOS) semiconductor memory devices, in particular, floating
gate MOS tran sistor structures used as memory cells, are well-known in the art. In general …

BACKGROUND OF. THE INVENTION'A nonvolatile memory maintains stored data even
though the memory does not have power for a period of time. A read only memory is a …