Optimization and characteristics of Al-free strained-layer InGaAs/GaInAsP/GaInP SCH-QW lasers (lambda approximately 980 nm) grown by gas-source MBE

G Zhang, A Ovtchinnokov, J Nappi… - IEEE journal of …, 1993 - ieeexplore.ieee.org
Aluminum-free strained-layer InGaAs/GaInAsP/GaInP separate-confinement-heterostructure
quantum-well lasers emitting at 980 nm have been demonstrated. In particular, optimization …
被引用次数：19 相关文章 所有 6 个版本

InGaAs/GaAs/InGaP strained-layer-quantum-well lasers grown by gas-source molecular beam epitaxy

JM Kuo, MC Wu, YK Chen, MA Chin… - … and Applications IV, 1992 - spiedigitallibrary.org
Aluminum-free In O. 2 Ga 0.8 As/GaAs/In 0.49 Ga 0.5 l P strained-layer-quantum-well lasers
are grown by gas-source molecular beam epitaxy (GSMBE) for the first time. Ridge …
被引用次数：4 相关文章 所有 3 个版本

InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency

G Zhang, J Näppi, K Vänttinen, H Asonen, M Pessa - Electronics Letters, 1992 - IET
Strained-layer InGaAs/GaAs/GalnP separated confinement heterostructure single quantum-
well (SCH-SQW) lasers have been fabricated. These lasers exhibit a low threshold current …
被引用次数：7 相关文章 所有 6 个版本
[PDF] academia.edu

AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

P Savolainen, M Toivonen, S Orsila, M Saarinen… - Journal of electronic …, 1999 - Springer
Abstract Al x Ga y In 1− x− y As/InP strained-layer multiple-quantum-well lasers emitting at
1.3 µm have been grown by solid source molecular beam epitaxy, and the performance …
被引用次数：21 相关文章 所有 13 个版本

Low threshold current InGaAs/GaAs/GaInP lasers grown by gas‐source molecular beam epitaxy

G Zhang, J Näppi, K Vänttinen, H Asonen… - Applied physics …, 1992 - pubs.aip.org
Strained‐layer InGaAs/GaAs/GaInP separate confinement heterostructure single‐quantum
well lasers have been fabricated using gas‐source molecular beam epitaxy. A threshold …
被引用次数：41 相关文章 所有 7 个版本

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by …

GW Yang, RJ Hwu, ZT Xu, XY Ma - IEEE journal of quantum …, 1999 - ieeexplore.ieee.org
We report on the material growth and fabrication of high-performance 980-nm strained
quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs …
被引用次数：14 相关文章 所有 6 个版本

Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (/spl lambda/= 0.98/spl mu/m)

GW Yang, RJ Hwu, ZT Xu, XY Ma - IEEE Journal of selected …, 2000 - ieeexplore.ieee.org
We conduct a theoretical analysis of the design, fabrication, and performance measurement
of high-power and high-brightness strained quantum-well lasers emitting at 0.98/spl mu/m …
被引用次数：26 相关文章 所有 2 个版本

Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs: n substrates by metalorganic chemical vapor deposition

AM Jones, B Lent, JF Kluender… - IEEE Photonics …, 1997 - ieeexplore.ieee.org
Broad-area (W= 150 μm) single-quantum-well (SQW) lasers have been successfully
fabricated on n-type In/sub 0.03/Ga/sub 0.97/As substrates without incorporating aluminum …
被引用次数：5 相关文章 所有 3 个版本

Strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼ 0.98 μm) grown by gas‐source molecular beam epitaxy

G Zhang, A Ovtchinnikov - Applied physics letters, 1993 - pubs.aip.org
We report on the first strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP separate‐
confinement‐heterostructure quantum well lasers emitting at about 0.98 μm. The laser …
被引用次数：61 相关文章 所有 7 个版本
[PDF] academia.edu

High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm

TK Sharma, M Zorn, F Bugge… - IEEE Photonics …, 2002 - ieeexplore.ieee.org
High-power highly strained In/sub x/Ga/sub 1-x/As quantum-well lasers operating at 1.2 μm
are demonstrated. The edge emitting broad area (BA) laser diode structures are grown by …
被引用次数：44 相关文章 所有 5 个版本