Band‐gap and lattice constant data are presented characterizing the transient composition
that occurs at the onset of liquid‐phase‐epitaxial growth of InGaAsP on InP substrates. This …

InGaAsP layers grown by liquid-phase epitaxy on InP substrates can form lattice-matched
heterojunctions sensitive to light in the wavelength range from 0.9 to 1.7 μm. A simple model …

In experiments on the growth of InGaAsP alloys by liquid‐phase epitaxy on (100)‐InP
substrates, it has been found that doping the growth solution with Zn, Sn, or Te causes …

In experiments on the LPE growth of InGaAsP on (100)‐InP substrates, it has been found
that constant‐composition epitaxial layers can be grown at constant temperature using the …

Abstract Constant composition InGaAsP and InGaAs epitaxial layers can be grown using the
step-cooling technique. However, the requirement of a fixed growth temperature limits the …

The distribution coefficients for the growth of lattice-matched InGaAsP on (IOO)-InP
substrates in the 1.15-1.31-/. Lm spectral range have been determined. These results have …

The development of InGaAsP lattice-matched to InP as a suitable material for a range of
electronic devices is reviewed. Currently accepted values of fundamental material …

Precision x‐ray measurements have been performed on the compositional inhomogeneity
that occurs during the initial part of the liquid phase epitaxial (LPE) growth of InGaPAs on …

Publisher Summary This chapter discusses the liquid-phase epitaxy (LPE) growth of
InGaAsP and InGaAs—that is, the In-Ga-As-P and In-Ga-As phase diagrams, LPE growth …

The thickness of InGaAsP (Ag= 1.15, um) and InGaAs (Ag= 1.68, urn) liquid phase epitaxial
layers grown on (100) InP substrates by the step-cooling technique has been measured as a …