High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

YH Song, SJ Ahn, MW Kim, JO Lee… - Small (Weinheim an …, 2014 - europepmc.org
A hybrid complementary logic inverter consisting of a microelectromechanical system switch
as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide …

Complementary Logic Inverters: High‐Performance Hybrid Complementary Logic Inverter through Monolithic Integration of a MEMS Switch and an Oxide TFT (Small …

YH Song, SJK Ahn, MW Kim, JO Lee, CS Hwang, JE Pi… - Small, 2015 - Wiley Online Library
A hybrid complementary logic inverter consisting of an n-type oxide thin-film transistor (TFT)
and a microelectromechanical system switch is proposed as a promising alternative to p …

Flexible complementary oxide thin-film transistor-based inverter with high gain

SM Hsu, DY Su, FY Tsai, JZ Chen… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Wearable bio-sensing devices are considered promising for ubiquitous heath monitoring. To
accurately read out small bio-signals, the development of high-performance flexible front …

Oxide-based complementary inverters with high gain and nanowatt power consumption

Y Yuan, J Yang, Z Hu, Y Li, L Du… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Oxide semiconductors are ideal candidates for flexible and transparent electronics. Here, we
report complementary inverters based on p-type tin monoxide and n-type indium-gallium …

Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates

A Dindar, JB Kim, C Fuentes-Hernandez… - Applied Physics …, 2011 - pubs.aip.org
We report on the fabrication of p-channel thin film transistors (TFTs) and vertically stacked
complementary inverters comprised of a p-channel copper oxide TFT on top of an n-channel …

Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate

MS Oh, W Choi, K Lee, DK Hwang, S Im - Applied Physics Letters, 2008 - pubs.aip.org
We report on the fabrication of complementary inverters that have ZnO and pentacene as n-
type and p-type channels on a polyethersulfone substrate operating under 7 V⁠. Patterned …

Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm2/Vs

I Isakov, AF Paterson, O Solomeshch, N Tessler… - Applied Physics …, 2016 - pubs.aip.org
We report the development of hybrid complementary inverters based on p-channel organic
and n-channel metal oxide thin-film transistors (TFTs) both processed from solution at< 200 …

High-gain complementary inverter based on corbino p-type tin monoxide and n-type indium-gallium-zinc oxide thin-film transistors

HJ Joo, MG Shin, SH Kwon, HY Jeong… - IEEE Electron …, 2019 - ieeexplore.ieee.org
The present work investigated the electrical characteristics of Corbino structure p-type tin
monoxide (SnO) thin-film transistors (TFTs) and demonstrated a high-performance …

Low-Temperature Processed Complementary Inverter With Tin-Based Transparent Oxide Semiconductors

C Lee, JH Hong, J Shin, S Lee, M Kim… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Transparent oxide semiconductors are promising materials due to their various benefits,
such as high mobility and cost-efficient production. However, oxide semiconductors …

Complementary Inverter Circuits Based on p-Cu2O and n-ZTO Thin Film Transistors

MR Shijeesh, PA Mohan, MK Jayaraj - Journal of Electronic Materials, 2020 - Springer
This paper describes the fabrication of copper oxide and zinc tin oxide complementary
inverters where both the p-type and n-type channels were deposited by RF magnetron …