We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and
pentacene, and investigated their basic characteristics. We found that field-effect mobility is …

An innovative micro-electro-mechanical system/metal–oxide–semiconductor field-effect-
transistor (MEMS/MOSFET) hybrid switch is presented. The main switch of the hybrid device …

A new approach to micropower integrated circuits has been developed and is called
complementary transistor-transistor logic (CR/SUP 2/L). This logic combines the inherent …

Fully oxide thin-film transistor (TFT)-based complementary metal-oxide-semiconductor
(CMOS) ring oscillators are reported, for the first time, using large-area-compatible …

Key issues for flexible complementary electronics are low temperature processing, sufficient
performance of the integrated p-and n-type FET devices, and cheap semiconducting and …

We investigated hybrid organic–inorganic complementary inverters with a solution-
processed indium–gallium–zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p …

In previous work, we have developed a fabrication process producing thin film transistors
based on the complementary metal-oxide-silicon technology. In this paper, we propose a …

Our compact switching converter using a thin-film microtransformer mono-lithically
integrated with rectifier diodes represents the first step in developing a monolithic micro …

Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics
because of their high electrical performance, low process temperature, high uniformity, and …

Hybrid organic–inorganic complementary inverters were demonstrated on a flexible
polyethersulfone (PES) substrate with vertically stacked p-channel pentacene and n …