This report will discuss a self-contained monolithic circuit, employing alternating positive and
negative gain channels controlled by a voltage comparator with 200μV hysteresis. Included …

In this letter, we report flexible fully oxide-based complementary metal-oxide-semiconductor
(CMOS) inverters and ring oscillators by the monolithic integration of flexible n-channel zinc …

A complementary organic thin-film transistor technology uses pentacene and F 16 CuPc as
the p-type and n-type materials, respectively. The semiconductors are patterned by vacuum …

The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters
with pentacene (⁠ p type) and ZnO (⁠ n type) hybrid channels on rf-deposited Al O x …

Hybrid organic–inorganic complementary inverters composed of pentacene and amorphous
InGaZnO for p-and n-channel thin-film transistors (TFTs) were fabricated on flexible …

Oxide semiconductors are currently a hot topic because of emerging applications in flat
panel displays (FPDs) and electronic circuits. N-type oxide semiconductors show promise as …

In this paper, we report on a low-voltage-operation n-type organic thin film transistor (OTFT)
and a complementary inverter circuit using a thiazolothiazole derivative as an organic …

A compact microelectromechanical (MEM) switch design and associated family of logic
gates, memory cells, and other basic very-large-scale integration (VLSI) digital circuit sub …

In this work, the authors demonstrate a novel vertically‐stacked thin film transistor (TFT)
architecture for heterogeneously complementary inverter applications, composed of p …

Direct current sputtering was used for deposition of Si film for precursor film of excimer laser
annealing, n+‐Si/p+‐Si film for source/drain contact, and SiO2 film for gate insulator of …