Nanomechanical switches based on metal-insulator-metal capacitors from a standard complementary-metal-oxide semiconductor technology
We report experimental demonstrations of contact-mode nano-electromechanical switches
obtained using a capacitor module based on metal-insulator-metal configuration of a …
obtained using a capacitor module based on metal-insulator-metal configuration of a …
Large-scale complementary integrated circuits based on organic transistors
B Crone, A Dodabalapur, YY Lin, RW Filas, Z Bao… - Nature, 2000 - nature.com
Thin-film transistors based on molecular and polymeric organic materials have been
proposed for a number of applications, such as displays,, and radio-frequency identification …
proposed for a number of applications, such as displays,, and radio-frequency identification …
A low-power single-input level shifter for oxide thin-film transistors
SY Kim, JD Kim, YK Kim, HK Lym, JT Kim… - Journal of Display …, 2013 - opg.optica.org
A new level shifter circuit suitable for implementation using n-channel oxide thin-film
transistors (TFTs) is reported. This level shifter is designed to convert a single 10 V input …
transistors (TFTs) is reported. This level shifter is designed to convert a single 10 V input …
Voltage transfer characteristics of CMOS-like inverters for ambipolar SnO thin-film transistors
The voltage transfer characteristics (VTC) of complementary metal-oxide-semiconductor
(CMOS)-like inverter using ambipolar SnO-thin-film transistor were analyzed based on …
(CMOS)-like inverter using ambipolar SnO-thin-film transistor were analyzed based on …
Nanomechanical switches for power saving in CMOS applications
DA Czaplewski, GM Kraus, CD Nordquist - Electronics letters, 2009 - IET
The performance of a nanomechanical switch for integration with complementary metal-
oxide-semiconductor electronics to reduce idle power consumption is presented. The DC …
oxide-semiconductor electronics to reduce idle power consumption is presented. The DC …
Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic
M Tada, T Sakamoto, Y Tsuji, N Banno… - 2009 IEEE …, 2009 - ieeexplore.ieee.org
A fully logic-compatible, nonvolatile crossbar switch using a novel dual-layer TiOx/TaSiOy
solid-electrolyte,“NanoBridge”, has been developed for the first time, which is scalable to 50 …
solid-electrolyte,“NanoBridge”, has been developed for the first time, which is scalable to 50 …
A 0.2 V micro‐electromechanical switch enabled by a phase transition
Abstract Micro‐electromechanical (MEM) switches, with advantages such as quasi‐zero
leakage current, emerge as attractive candidates for overcoming the physical limits of …
leakage current, emerge as attractive candidates for overcoming the physical limits of …
Transparent semiconducting oxide technology for touch free interactive flexible displays
Amorphous oxide semiconductor thin film transistors and sensors constitute fundamental
building blocks for a new generation of applications ranging from interactive displays and …
building blocks for a new generation of applications ranging from interactive displays and …
Copper iodide and oxide semiconductor thin films patterned by spray-spin coating for fabricating complementary inverters: Improving stability with passivation layers
Recently, copper iodide (CuI) has been studied as a solution-processed p-type
semiconductor owing to its high hole mobility and low-temperature processability. With the …
semiconductor owing to its high hole mobility and low-temperature processability. With the …
Transparent-Oxide–Semiconductor-Based Self-Alignment Thin-Film Transistors
Y Hirouchi, A Yamagishi, S Naka… - Japanese Journal of …, 2009 - iopscience.iop.org
Transparent-oxide–semiconductor-based self-alignment thin-film transistors fabricated by a
back-surface exposure method were investigated. The alignment margin of the source and …
back-surface exposure method were investigated. The alignment margin of the source and …