Memristive switches with two switching polarities in a forming free device structure

R Bruchhaus, CR Hermes, R Waser - MRS Online Proceedings …, 2011 - cambridge.org
In this study an electroforming free device structure based on 25nm thin TiO2 thin films is
presented. The TiO2 films are deposited on CMOS compatible W plugs. The use of 5nm …

Demonstration of low voltage and functionally complete logic operations using body-biased complementary and ultra-thin ALN piezoelectric mechanical switches

N Sinha, T Jones, Z Guo… - 2010 IEEE 23rd …, 2010 - ieeexplore.ieee.org
This paper reports, for the first time, on the demonstration of low voltage and functionally
complete logic elements (NAND and NOR) implemented by using body-biased …

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

J Lee, J Moon, JE Pi, SD Ahn, H Oh, SY Kang… - Applied Physics …, 2018 - pubs.aip.org
Stoichiometric crystalline binary metal oxide thin films can be used as channel materials for
transparent thin film transistors. However, the nature of the process used to fabricate these …

3.4-inch quarter high definition flexible active matrix organic light emitting display with oxide thin film transistor

K Hatano, A Chida, T Okano, N Sugisawa… - Japanese Journal of …, 2011 - iopscience.iop.org
In this paper, we report a 3.4-in. flexible active matrix organic light emitting display
(AMOLED) display with remarkably high definition (quarter high definition: QHD) in which …

NanoBridge technology for reconfigurable LSI

T Sakamoto, S Kaeriyama, M Mizuno… - NEC Technical …, 2007 - waseda.elsevierpure.com
抄録 We have investigated a NanoBridge technology for a high performance LSI that is
reconfigurable. The NanoBridge comprises a solid electrolyte sandwiched betvveen two …

Complementary logic gates and ring oscillators on plastic substrates by use of printed ribbons of single-crystalline silicon

DH Kim, JH Ahn, HS Kim, KJ Lee… - IEEE Electron …, 2007 - ieeexplore.ieee.org
CMOS inverters and three-stage ring oscillators were formed on flexible plastic substrates by
transfer printing of p-type and n-type single crystalline ribbons of silicon. The gain and the …

[HTML][HTML] Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates

P Schlupp, S Vogt, H Von Wenckstern, M Grundmann - APL Materials, 2020 - pubs.aip.org
Deposition of semiconductors on bendable substrates is a crucial step toward flexible
circuitry and deposition by a roll-to-roll process. Since most bendable substrates have …

Bootstrapped low-voltage analog switches

J Steensgaard - … IEEE International Symposium on Circuits and …, 1999 - ieeexplore.ieee.org
Novel low-voltage constant-impedance analog switch circuits are proposed. The switch
element is a single MOSFET, and constant-impedance operation is obtained using simple …

Atomically thin tin monoxide-based p-channel thin-film transistor and a low-power complementary inverter

CH Huang, Y Tang, TY Yang, YL Chueh… - ACS Applied Materials …, 2021 - ACS Publications
Atomically thin oxide semiconductors are significantly expected for next-generation cost-
effective, energy-efficient electronics. A high-performance p-channel oxide thin-film …

A molybdenum disulfide/carbon nanotube heterogeneous complementary inverter

J Huang, S Somu, A Busnaina - Nanotechnology, 2012 - iopscience.iop.org
We report a simple, bottom-up/top-down approach for integrating drastically different
nanoscale building blocks to form a heterogeneous complementary inverter circuit based on …