We report a simple, bottom-up/top-down approach for integrating drastically different
nanoscale building blocks to form a heterogeneous complementary inverter circuit based on …

Due to the untiring efforts of scientists and researchers on oxide semiconductor materials,
processes, and devices, the applications for oxide-based thin film transistors (TFTs) have …

BACKGROUND Micro-Electromechanical Systems (MEMS) devices are starting to be used
in a variety of applications. In particular, there is great demand for MEMS switches due to …

We report the first implementation of a complementary circuit using thin-film source-gated
transistors (SGTs). The n-channel and p-channel SGTs were fabricated using the inorganic …

Flexible electronics based on complementary metal‐oxide‐semiconductor (CMOS)
technology have enabled a smart soft world. However, the trade‐off among flexibility …

For many decades, novel devices demonstrating step‐wise current–voltage characteristic at
room temperature have been pursued to realize multi‐valued logic computing that has …

Flexible complementary inverters composed of p-channel pentacene thin-film transistors
(TFTs) and n-channel amorphous indium gallium zinc oxide TFTs were fabricated on …

A novel power actuator having a good switching behaviour along with a highly performing
on-state conduction characteristic is presented. The device is a monolithic integration of a …

This paper presents a single-inductor multiple-output (SIMO) converter operating in pseudo-
continuous conduction mode (PCCM) and/or discontinuous conduction mode (DCM). With …

Ultra-low-voltage processors of highly duty-cycled applications such as wireless sensor
nodes must support two modes of operation: active mode and sleep mode. Even in sleep …