A combined transmission electron microscopy-scanning tunneling microscopy (TEM-STM)
technique has been used to investigate the force interactions of silicon and germanium …

A two-terminal bistable device, having both ON and OFF regimes, has been demonstrated
with Ge nanowires using an in situ TEM− STM technique. The function of the device is based …

We report the fabrication and characterization of nanowire electromechanical switches
consisting of chemical-vapour-deposition-grown silicon nanowires suspended over metal …

Electromechanical coupling is a topic of current interest in nanostructures, such as metallic
and semiconducting nanowires, for a variety of electronic and energy applications. As a …

By using complementary-metal-oxide-semiconductor processes, a silicon based bi-stable
nanoelectromechanical non-volatile memory is fabricated and characterized. The main …

We present a micromechanical device designed to be used as a non-volatile mechanical
memory. The structure is composed of a suspended slender nanowire (width: 100 nm …

We report here the observation of a new self-oscillation mechanism in
nanoelectromechanical systems (NEMS). A highly resistive nanowire was positioned to form …

A nanoelectromechanical (NEM) device developed for dynamic random access memory
(DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical …

This paper presents a microelectromechanical systems (MEMS) device for simultaneous
electrical and mechanical characterization of individual nanowires. The device consists of …

A nanoelectromechanical device incorporating the nanocrystalline silicon (nc-Si) dots is
proposed for use as a high-speed and nonvolatile memory. The nc-Si dots are embedded as …