Shubnikov–de Haas (SdH) and Hall effect measurements, performed in the temperature
range between 3.3 and 20 K and at magnetic fields up to 2.3 T, have been used to …

We report an investigation of the scattering mechanisms affecting the two‐dimensional
electron system in modulation‐doped Ga0. 47In0. 53As–Al0. 48In0. 52As single …

Hall effect measurements as a function of magnetic field up to 2.3 T, performed in the
temperature range between 3.3 and 12 K, have been used to investigate the electronic …

The measurements of resistivity and low‐field Hall effect made in the temperature range 3.3–
295 K have been used to investigate the transport properties of modulation‐doped, lattice …

We report magnetotransport experiments in high carrier density GaAs/Ga 0.8 In 0.2 As/Ga
0.75 Al 0.25 As heterostructures in magnetic fields up to 50 T. At the lowest electron …

The electrical and galvanomagnetic properties of the two‐dimensional electron gas (2DEG)
in δ‐doped and modulation doped strain–relaxed In0. 15Al0. 85As/In0. 17Ga0. 83As …

Magnetotransport effects have been studied in modulation-doped In 0.53 Ga 0.47 As/In 0.52
Al 0.48 As heterojunctions grown by molecular beam epitaxy. Mobilities in excess of 15 m 2 …

The results of magnetotransport measurements are used to investigate the scattering
mechanisms and hence to determine the alloy disorder scattering potential in modulation …

The gate voltage dependent charge distribution within the quantum wells of modulation δ‐
doped In0. 29Al0. 71As/In0. 3Ga0. 7As heterostructures, grown by molecular beam epitaxy …

The gate voltage dependence of the low‐field electron mobility has been investigated in a
In0. 53Ga0. 47As/In0. 52Al0. 48As modulation‐doped heterostructure using a real‐time …