Growth and Characterization of Liquid‐Phase Epitaxial InAs1−xPx
GA Antypas, TO Yep - Journal of Applied Physics, 1971 - pubs.aip.org
Liquid‐phase epitaxial layers of InAs1− x P x were grown in the range of 0< x< 0. 735 on
{1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's …
{1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's …
Liquid Phase Epitaxial Growth of InAs1− x Sb x
GB Stringfellow, PE Greene - Journal of The Electrochemical …, 1971 - iopscience.iop.org
Single-crystal epitaxial layers of InAs1-~ Sbx have been grown using a steady-state, liquid
phase epitaxial growth technique. In the range of 0~ x~ 0.35 they were grown on InAs …
phase epitaxial growth technique. In the range of 0~ x~ 0.35 they were grown on InAs …
Growth and characterization of InGaAsP lattice-matched to InP
PA Houston - Journal of Materials Science, 1981 - Springer
The development of InGaAsP lattice-matched to InP as a suitable material for a range of
electronic devices is reviewed. Currently accepted values of fundamental material …
electronic devices is reviewed. Currently accepted values of fundamental material …
Composition dependence of the band gaps of In1−xGaxAs1−yPy quaternary solids lattice matched on InP substrates
K Nakajima, A Yamaguchi, K Akita… - Journal of Applied Physics, 1978 - pubs.aip.org
The In‐Ga‐As‐P quaternary phase diagram required for the growth of lattice‐matched In1− x
Ga x As1− y P y layers on InP substrates has been determined experimentally at 650° C …
Ga x As1− y P y layers on InP substrates has been determined experimentally at 650° C …
Growth and Characterization of InP‐lnGaAsP Lattice-Matched Heterojunctions
GA Antypas, RL Moon - Journal of The Electrochemical Society, 1973 - iopscience.iop.org
Liquid phase epitaxy has been employed for the growth of InP-InGaAsP lattice-matched
heterojunctions. The epitaxial layers were grown at 650 625~ on (100),(lll) A, and (lll) B …
heterojunctions. The epitaxial layers were grown at 650 625~ on (100),(lll) A, and (lll) B …
Liquid phase epitaxial growth of lattice‐matched Al0. 48In0. 52As on InP
K Nakajima, T Tanahashi, K Akita - Applied Physics Letters, 1982 - pubs.aip.org
FIG. 2. Growth conditions to obtain AI. In, _xAs layers with smooth surfaces. approximately
the real liquidus temperatures of the solution compositions on the basis of the calculated …
the real liquidus temperatures of the solution compositions on the basis of the calculated …
Phase diagram, crystal growth, and band structure of InxGa1-xAs
TY Wu, GL Pearson - Journal of Physics and Chemistry of Solids, 1972 - Elsevier
The liquidus and solidus lines in the In-rich region of the In Ga As system have been
established. The liquidus data were obtained by measuring the amount of InAs which …
established. The liquidus data were obtained by measuring the amount of InAs which …
The liquid-phase epitaxial growth of InGaAsP
K Nakajima - Semiconductors and semimetals, 1985 - Elsevier
Publisher Summary This chapter discusses the liquid-phase epitaxy (LPE) growth of
InGaAsP and InGaAs—that is, the In-Ga-As-P and In-Ga-As phase diagrams, LPE growth …
InGaAsP and InGaAs—that is, the In-Ga-As-P and In-Ga-As phase diagrams, LPE growth …
Liquid-phase epitaxial growth of InP and InGaAsP alloys
SH Groves, MC Plonko - Journal of Crystal Growth, 1981 - Elsevier
Liquid-phase epitaxy (LPE) has been used to grow high-quality layers of InP and InGaAsP
alloys on InP substrates for a wide variety of device-development and physical …
alloys on InP substrates for a wide variety of device-development and physical …
High purity InP and InGaAsP grown by liquid phase epitaxy
LW Cook, MM Tashima, N Tabatabaie, TS Low… - Journal of Crystal …, 1982 - Elsevier
Methods for obtaining high purity InP and InGaAsP alloy epitaxial layers on (100)-oriented
InP substrates using liquid phase epitaxy have been explored and are discussed. Net carrier …
InP substrates using liquid phase epitaxy have been explored and are discussed. Net carrier …