0 022-0248/8l/0000—0000/502.50 ©North-Holland Page 1 138 Journal of Crystal Growth 54
(1981)1 38—149 North-Holland Publishing Company THE STATUS OF CURRENT …

Band‐gap and lattice constant data are presented characterizing the transient composition
that occurs at the onset of liquid‐phase‐epitaxial growth of InGaAsP on InP substrates. This …

In experiments on the LPE growth of InGaAsP on (100)‐InP substrates, it has been found
that constant‐composition epitaxial layers can be grown at constant temperature using the …

InP was grown on (001) and (111) B InP substrates by the supercooling and step-cooling
technique and In 1-x Ga x As y P 1-y (x≈ 0.2 and y≈ 0.5) was grown on (001),(111) A and …

We have studied the phase separation and ordering phenomenon of InAlAs epilayers grown
on InP substrate by metal–organic chemical vapor deposition (MOCVD). From the intensity …

Abstract Layers of InGaAsP/(100) InP covering the full wavelength range from 0.92 to 1.65
μm were grown by liquid phase epitaxy at 630° C from two-phase solutions and at 600° C …

Epitaxial layers of In1− xGaxAsyP1− y have been grown lattice-matched to (100) InP
substrates over a wide alloy range using gas source molecular beam epitaxy (GSMBE) …

A common cleaning technique of InP substrates is the thermal in situ stabilization under As
fluxes at the oxide desorption temperature. Since this desorption temperature is well above …

The effects of rapid thermal degradation of InP substrate on the quality of epitaxially grown
layers are generally underestimated. Scanning photoluminescence, photocurrent, and etch …

Constant composition InGaAsP epitaxial layers can be grown on (100) InP substrates at a
constant temperature using the diffusion-limited step-cooling growth technique, and in …