Barrier height determination for n-type 4H-SiC schottky contacts made using various metals
R Yakimova, C Hemmingsson, MF Macmillan… - Journal of electronic …, 1998 - Springer
We have studied Schottky barrier contacts to n-type 4H-SiC with Cr, Mo, Ta, W, Au, and Ni.
We have focused on effects of the metal work function, measurement technique and …
We have focused on effects of the metal work function, measurement technique and …
Improved Ni Schottky Contacts on n-Type 4H-SiC Using Thermal Processing
TN Oder, TL Sung, M Barlow, JR Williams… - Journal of electronic …, 2009 - Springer
High-temperature processing was used to improve the barrier properties of three sets of n-
type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum …
type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum …
Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC
D Defives, O Durand, F Wyczisk, O Noblanc… - Microelectronic …, 2001 - Elsevier
Schottky contacts are investigated on n-type 4H-SiC by electrical measurements and
microstructural analyses to understand the behaviour of such a barrier. Titanium and …
microstructural analyses to understand the behaviour of such a barrier. Titanium and …
Metal Schottky barrier contacts to alpha 6H‐SiC
JR Waldrop, RW Grant, YC Wang… - Journal of applied …, 1992 - pubs.aip.org
Formation of Schottky barrier contacts to n‐type 6H‐SiC for a number of metals chosen to
include a variety of physical and chemical properties has been investigated. The metals (Pd …
include a variety of physical and chemical properties has been investigated. The metals (Pd …
Schottky barrier height of metal contacts to p‐type alpha 6H‐SiC
JR Waldrop - Journal of applied physics, 1994 - pubs.aip.org
A survey of metal (Pd, Ni, Au, Ag, Mg, Ti, and Al) Schottky barrier contact formation to p‐type
Si‐face (0001) and C‐face (0001̄) 6H‐SiC by using x‐ray photoemission spectroscopy is …
Si‐face (0001) and C‐face (0001̄) 6H‐SiC by using x‐ray photoemission spectroscopy is …
Aluminum Schottky contacts to n-type 4H-SiC
WR Harrell, J Zhang, KF Poole - Journal of Electronic Materials, 2002 - Springer
Aluminum Schottky contacts to n-type 4H-SiC were fabricated, and the results of electrical
measurements on the devices are presented along with the Schottky barrier height and …
measurements on the devices are presented along with the Schottky barrier height and …
Growth and characterization of SiC epitaxial layers on Si-and C-face 4H SiC substrates by chemical-vapor deposition
High-quality Schottky junctions have been fabricated on n-type 4 H SiC epitaxial layers
grown by chemical-vapor deposition on C-and Si-face substrates in order to understand the …
grown by chemical-vapor deposition on C-and Si-face substrates in order to understand the …
4H-SiC Schottky barrier diodes using Mo-, Ti-and Ni-based contacts
D Perrone, M Naretto, S Ferrero, L Scaltrito… - Materials Science …, 2009 - Trans Tech Publ
We have studied different Schottky and ohmic contacts on 4H-SiC with the aim to obtain
Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and …
Schottky barrier diodes (SBDs) capable to operate at high temperatures, frequencies and …
Formation and Schottky barrier height of metal contacts to β‐SiC
JR Waldrop, RW Grant - Applied Physics Letters, 1990 - pubs.aip.org
Formation of Schottky barrier contacts to n‐type β‐SiC (100) was systematically investigated
for several metals with various physical and chemical properties. The metals (Pd, Au, Co, Ti …
for several metals with various physical and chemical properties. The metals (Pd, Au, Co, Ti …
Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts
Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Schottky Mo/4H-SiC
diodes have been measured and analyzed as a function of temperature between 80 and …
diodes have been measured and analyzed as a function of temperature between 80 and …