Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition

RD Dupuis, JG Neff, CJ Pinzone - Journal of crystal growth, 1992 - Elsevier
We report here the low-pressure metalorganic chemical vapor deposition growth of AlGaAs-
GaAs quantum well heterostructures having low-temperature (4.2 K) photoluminescence …
被引用次数：15 相关文章 所有 6 个版本
[PDF] afeka.ac.il

Sub-meV photoluminescence linewidth and> 106cm2∕ Vs electron mobility in AlGaAs∕ GaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly …

E Pelucchi, N Moret, B Dwir, DY Oberli… - Journal of applied …, 2006 - pubs.aip.org
We report sub-meV (as low as 0.6 meV⁠) low-temperature photoluminescence linewidth
and high low-temperature electron mobility (μ∼ 1− 1.5× 10 6 cm 2∕ Vs) of GaAs quantum …
被引用次数：39 相关文章 所有 14 个版本

AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition

DC Bertolet, JK Hsu, KM Lau - Journal of applied physics, 1987 - pubs.aip.org
Single and multiple quantum wells with well widths ranging from 10 to 135 Å were grown by
atmospheric pressure organometallic chemical vapor deposition and characterized by …
被引用次数：35 相关文章 所有 7 个版本
[PDF] academia.edu

Effect of the growth parameters on the luminescence properties of high-quality GaAs/AlGaAs multiquantum wells on (1 1 1) A substrates by metal organic vapor phase …

A Sanz-Hervás, S Cho, J Kim, A Majerfeld, C Villar… - Journal of crystal …, 1998 - Elsevier
We report on a study of the growth parameters and their effect on the structural and optical
properties of GaAs/AlGaAs multiquantum well (MQW) structures grown on novel (111) A …
被引用次数：12 相关文章 所有 6 个版本

Growth and characterization of high-quality MOCVD AlGaAs/GaAs single quantum wells

RD Dupuis, RC Miller, PM Petroff - Journal of Crystal Growth, 1984 - Elsevier
Abstract The growth of AlGaAs/GaAs single quantum well (QW) heterostructures by
metalorganic chemical vapor deposition (MOCVD) has been studied by varying the growth …
被引用次数：28 相关文章 所有 3 个版本

Optimal growth conditions of AlGaAs/GaAs quantum wells by flow-rate modulation epitaxy

Y Yamauchi, T Makimoto… - Japanese journal of …, 1989 - iopscience.iop.org
AlGaAs/GaAs single quantum wells with narrow photoluminescence linewidths were grown
at 570 C by modified metal-organic chemical vapor deposition, flow-rate modulation epitaxy …
被引用次数：14 相关文章 所有 11 个版本

Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wells

DC Bertolet, JK Hsu, KM Lau… - Journal of applied …, 1988 - ui.adsabs.harvard.edu
A study of the low-temperature photoluminescence characteristics of very narrow one-
dimensional quantum-well structures, grown by atmospheric pressure organometallic …
被引用次数：48 相关文章 所有 5 个版本

Very high quality single and multiple GaAs quantum wells grown by chemical beam epitaxy

WT Tsang, RC Miller - Applied physics letters, 1986 - pubs.aip.org
High quality GaAs/Al x Ga1− x As single and multiquantum well heterostructures were grown
for the first time by chemical beam epitaxy. Studies using low‐temperature …
被引用次数：35 相关文章 所有 6 个版本

Influence of substrate temperature on the growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor phase epitaxy

JR Shealy, GW Wicks, H Ohno… - Japanese journal of …, 1983 - iopscience.iop.org
Abstract The growth of AlGaAs/GaAs quantum well heterostructures by organometallic vapor
phase epitaxy has been investigated over a range of substrate temperature from 500 C to …
被引用次数：8 相关文章 所有 10 个版本

Interfacial properties of (111) A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy

A Sanz-Hervás, S Cho, A Majerfeld, BW Kim - Applied Physics Letters, 2000 - pubs.aip.org
We present the heterointerfacial properties of GaAs/AlGaAs multiquantum-well structures
grown by atmospheric-pressure metalorganic vapor phase epitaxy on (111) A GaAs …
被引用次数：9 相关文章 所有 3 个版本