We report on the development of monolithic two-section dilute nitride passively mode-locked
ridge-waveguide lasers. The dilute nitride material system can cover a wide wavelength …

We demonstrate picosecond pulse generation in the blue-violet wavelength region by
passive intra-cavity mode-locking in GaN-based ridge waveguide laser diodes with …

Passive mode-locked pulses with repetition frequencies in the range 40 to 90 GHz were
observed in blue-violet GaN-based quantum-well lasers without external cavities. The lasers …

We demonstrated the mode locking of an external-cavity 404 nm GaInN semiconductor laser
diode with an internal saturable absorber layer for the first time. Stable passive mode locking …

A novel low-loss, single-step-growth 1.3‐µm GaInNAs saturable Bragg reflector mode-
locking element has been developed. Combined radial thickness and postgrowth annealing …

We demonstrate a 1240-nm GaInNAs multi-quantum well laser diode with an integrated
saturable electro-absorber whose wavelength is converted to 620 nm. For conversion, we …

We report the first hybrid mode-locking of a monolithic two-section multiple quantum well
InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μmlong absorber …

Conclusions: We have demonstrated 1.55 mm passive MLLs with a single GaInNAsSb
quantum well active region. Complete modelocking up to 13.2 GHz and a pulse width as …

We report on the growth, material and nonlinear optical properties of GaInNAs quantum
wells (QWs) used in semiconductor saturable absorber mirrors (SESAMs) for passive mode …

Passive mode locking of a bisectional GaInN quantum well laser diode was confirmed with
external-cavity geometry. Optical pulses of 3 ps duration were produced by controlling the …